NUEVO

JFE2325

ACTIVO

Transistor JFET canal N 30V par emparejado puertas autopolarizadas para mic. condensador electret

Haga su pedido ahora

Hoja de datos

document-pdfAcrobat JFE2325 Dual, Low-Power, N-Channel JFET for Electret Microphones datasheet (Rev. A) (Inglés) PDF | HTML

JFE2325

ACTIVO

Hoja de datos

Haga su pedido ahora

Detalles del producto

Number of channels

2

Vn at 1 kHz (nV√Hz)

4.3

Breakdown voltage (V)

30

VDS (V)

30

VGS (V)

5

Rating

Catalog

Operating temperature range (°C)

-40 to 125

Number of channels

2

Vn at 1 kHz (nV√Hz)

4.3

Breakdown voltage (V)

30

VDS (V)

30

VGS (V)

5

Rating

Catalog

Operating temperature range (°C)

-40 to 125

X2SON (DTQ)

6

0.8 mm² (1 mm × 0.8 mm)

Monolithic, matched, N-Channel JFETs
Self-biased gates for high input impedance (>400GOhm)
Low input capacitance: 0.85pF per JFET
Low noise: ˗110dBV(A-wt.) with 5pF input capacitance
Low VGS mismatch: 30mV (max)
Low IDSS mismatch: 5% (max)
High gate-to-drain breakdown voltage: 30V
Extremely Small Package: 0.8mm × 1mm X2SON

Monolithic, matched, N-Channel JFETs
Self-biased gates for high input impedance (>400GOhm)
Low input capacitance: 0.85pF per JFET
Low noise: ˗110dBV(A-wt.) with 5pF input capacitance
Low VGS mismatch: 30mV (max)
Low IDSS mismatch: 5% (max)
High gate-to-drain breakdown voltage: 30V
Extremely Small Package: 0.8mm × 1mm X2SON

The JFE2325 is a monolithic, matched-pair discrete JFET intended for use with very high-impedance sensors such as electret condenser microphones (ECMs). The device consists of two N-channel JFETs, laid out for excellent matching on a single die. The gate of each JFET is biased by an integrated diode which allows for direct coupling of a signal source to the gate without the need for a biasing resistor. The JFE2325 achieves much higher input impedance (>400GOhm) than possible if discrete resistors were used to bias the gate. Furthermore, the JFE2325 features an extremely low input capacitance of 0.85pF per JFET which maximizes signal levels from transducers with extremely low output capacitance.

Each JFET is capable of 0.7mS of transconductance when configured to run at the full drain current of 385µA. The JFETs can be used individually, or in parallel for higher transconductance and lower noise.

The JFE2325 can withstand a high gate-to-drain voltage of 30V. The temperature range is specified from –40°C to +125°C.

The JFE2325 is a monolithic, matched-pair discrete JFET intended for use with very high-impedance sensors such as electret condenser microphones (ECMs). The device consists of two N-channel JFETs, laid out for excellent matching on a single die. The gate of each JFET is biased by an integrated diode which allows for direct coupling of a signal source to the gate without the need for a biasing resistor. The JFE2325 achieves much higher input impedance (>400GOhm) than possible if discrete resistors were used to bias the gate. Furthermore, the JFE2325 features an extremely low input capacitance of 0.85pF per JFET which maximizes signal levels from transducers with extremely low output capacitance.

Each JFET is capable of 0.7mS of transconductance when configured to run at the full drain current of 385µA. The JFETs can be used individually, or in parallel for higher transconductance and lower noise.

The JFE2325 can withstand a high gate-to-drain voltage of 30V. The temperature range is specified from –40°C to +125°C.

filter

Buscar otro/a Transistores

Descargar Ver vídeo con transcripción Video

Documentación técnica

No se encontraron resultados. Borre su búsqueda y vuelva a intentarlo.

Ver todo 2

Documentación principal	Tipo	Título	Opciones de formato	Descargar la versión más reciente en inglés	Fecha
*	Hoja de datos	JFE2325 Dual, Low-Power, N-Channel JFET for Electret Microphones datasheet (Rev. A)	PDF \| HTML		18/06/2026
	EVM User's guide	JFE2325 Evaluation Module User's Guide	PDF \| HTML		9/12/2025

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

JFE2325EVM — Módulo de evaluación JFE2325

LA placa de evaluación JFE2325 convierte el dispositivo JFE2325 en el encapsulado DTQ en un tamaño PDIP estándar, doble de 300 mil de ancho y fácil de usar. La PCB se puede utilizar en un conector hembra PDIP estándar. Las dimensiones de la placa son de 550 mil x 600 mil.

Guía del usuario: PDF | HTML

Productos y hardware compatibles

En inventario

Límite:

Inicie sesión para hacer un pedido

lock

Iniciar sesión para ver el inventario

??asset.out-of-stock-ti_es_MX??

No disponible

Modelo de simulación