DRV3263-Q1
- AEC-Q100 Test Guidance for automotive applications
- Device ambient temperature: –40°C to +150°C
- Functional Safety-Compliant
- Developed for functional safety applications
- Documentation to aid ISO 26262 system design will be available upon production release
- Systematic capability up to ASIL D targeted
- Three phase half-bridge gate driver
- Drives six N-channel MOSFETs (NMOS)
- 8 to 85V wide operating voltage range
- Bootstrap architecture for high-side gate driver
- 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
- Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply
- Cutoff driver
- Drive N-channel MOSFET cutoff switches in multiple topologies
- Two SPI-controllable channels (DRV3263A) or
- One channel with SPI or HW pin control (DRV3263B)
- Smart Gate Drive architecture
- 15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
- Independently configurable pre-charge and pre-discharge regions
- Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
- Low-side Current Sense Amplifier
- Sub-1mV low input offset across temperature
- 8-level adjustable gain
- SPI-based detailed configuration and diagnostics with OTP memory to store default configuration settings
- DRVOFF independent driver disable pin
- High voltage wake up pin (nSLEEP)
- 6x, 3x, 1x, and Independent PWM modes
- Supports 3.3V and 5V logic inputs
- Integrated protection features
- Battery and power supply voltage monitors
- MOSFET VDS and Rsense over current monitors
- MOSFET VGS gate fault monitors
- Analog Built-In Self-Test (ABIST)
- Device thermal warning and shutdown
- Fault condition indicator pin
The DRV3263-Q1 is an integrated smart gate driver for 48V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV3263-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage for driving external switches, which can be controlled through dedicated cutoff driver pins.
The DRV3263-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset and low gain error of the amplifiers enable the system to obtain precise motor current measurements.
A wide range of diagnostics and protection features are integrated with the DRV3263-Q1, enabling a robust motor drive system design and reduce external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
기술 자료
| 상위 문서 | 유형 | 직함 | 형식 옵션 | 날짜 |
|---|---|---|---|---|
| * | Data sheet | DRV3263-Q1 48V Battery 3-Phase Gate Driver Unit with Integrated Cutoff Drivers datasheet | PDF | HTML | 2026/03/26 |
설계 및 개발
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| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| VQFN (RGZ) | 48 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치