DRV8161
- Drives two N-channel MOSFETs in half-bridge configuration
- High-side MOSFET source/drain up to 102V (absolute max)
- 8V (5V DRV8162L) to 20V gate drive power supply
- Integrated bootstrap diode
- 16-level gate drive peak current
- 16mA - 1000mA source current
- 32mA - 2000mA sink current
- Source-sink current ratio 1:1, 1:2, 1:3
- Adjustable PWM dead time insertion 20ns - 400ns
- Robust design for motor phase (SH) switching
- Slew rate 20V/ns
- Negative transient voltage -20V
- 2-A strong gate pull down
- Split gate drive supply inputs for redundant shutdown (DRV8162, DRV8162L)
- Low-offset current sense amplifier (DRV8161)
- Adjustable gain (5, 10, 20, 40 V/V)
- Flexible PWM control interface; 2-pin PWM, and independent PWM mode
- 13-level VDS over current threshold
- Independent shutdown pin (nDRVOFF)
- Gate driver soft shutdown sequence
- Integrated protection features
- GVDD under voltage (GVDDUV)
- Bootstrap under voltage (BST_UV)
- MOSFET over current protection (VDS)
- Shoot through protection
- Thermal shutdown (OTSD)
- Fault condition indicator (nFAULT)
- Supports 3.3V, and 5V Logic Inputs
The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture supports 16-level (48 combination) gate drive peak current up to 1A source and 2A sink, and a built-in timing control of gate drive current. The devices can be used to drive various types of loads including brushless/brushed DC motors, PMSM, stepper motors, SRM, and solenoids.
Internal protection functions are provided for supply undervoltage, FET over-current, and die over temperature. The nFAULT pin indicates fault events detected by the protection features. The nDRVOFF pin initiates power stage shutdown independent from PWM control. The DRV8162 and DRV8162L devices offer split power supply architecture to assist safe torque off (STO) function.
Many device parameters including gate drive current, dead time, PWM control interface, and over current detection are configurable with a few passive components connected to device pins. An integrated low-side current sense amplifier (DRV8161) provides current measurement information back to the controller.
기술 문서
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier datasheet | PDF | HTML | 2024/05/06 |
| EVM User's guide | DRV8161 Evaluation Module User's Guide | PDF | HTML | 2024/04/26 |
설계 및 개발
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DRV8161EVM — DRV8161 평가 모듈
| 패키지 | 핀 | 다운로드 |
|---|---|---|
| VSSOP (DGS) | 20 | 옵션 보기 |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치