DRV8306

활성

40V 최대 센서드 사다리꼴 제어, 3상 BLDC 스마트 게이트 드라이버

이 제품의 최신 버전이 있습니다

open-in-new 대안 비교
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능
신규 MCT8315Z 활성 최대 40V, 4A 피크, 센서드 사다리꼴 제어 3상 BLDC 모터 드라이버 Integrated FET version for <40 W

제품 상세 정보

Rating Catalog Architecture Gate driver Control interface 1xPWM Gate drive (A) 0.15 Vs (min) (V) 6 Vs ABS (max) (V) 40 Features Hall Element Comparators, Hardware Management I/F, Integrated Motor Control, Smart Gate Drive, Tach/FG Feedback Operating temperature range (°C) -40 to 125
Rating Catalog Architecture Gate driver Control interface 1xPWM Gate drive (A) 0.15 Vs (min) (V) 6 Vs ABS (max) (V) 40 Features Hall Element Comparators, Hardware Management I/F, Integrated Motor Control, Smart Gate Drive, Tach/FG Feedback Operating temperature range (°C) -40 to 125
VQFN (RSM) 32 16 mm² 4 x 4
  • 6-V to 38-V, Triple Half-Bridge Gate Driver With Integrated 3x Hall Comparators
    • 40-V Absolute Maximum Rating
    • Fully Optimized for 12-V and 24-V DC Rails
    • Drives High-Side and Low-Side N-Channel MOSFETs
    • Supports 100% PWM Duty Cycle
  • Smart Gate Drive Architecture
    • Adjustable Slew-Rate Control for Better EMI and EMC Performance
    • VGS Hand-Shake and Minimum Dead-Time Insertion to Avoid Shoot-Through
    • 15-mA to 150-mA Peak Source Current
    • 30-mA to 300-mA Peak Sink Current
  • Integrated Commutation from Hall Sensors
    • 120° Trapezoidal Current Control
    • Supports Low-Cost Hall Elements
    • Tacho Output Signal (FGOUT) for Closed Loop Speed Control
  • Integrated Gate Driver Power Supplies
    • High-Side Charge Pump
    • Low-Side Linear Regulator
  • Cycle-by-Cycle Current Limit
  • Supports 1.8-V, 3.3-V, and 5-V Logic Inputs
  • Low-Power Sleep Mode
  • Linear Voltage Regulator, 3.3 V, 30 mA
  • Compact VQFN Package and Footprint
  • Integrated Protection Features
    • VM Undervoltage Lockout (UVLO)
    • Charge Pump Undervoltage (CPUV)
    • MOSFET Overcurrent Protection (OCP)
    • Gate Driver Fault (GDF)
    • Thermal Shutdown (OTSD)
    • Fault Condition Indicator (nFAULT)
  • 6-V to 38-V, Triple Half-Bridge Gate Driver With Integrated 3x Hall Comparators
    • 40-V Absolute Maximum Rating
    • Fully Optimized for 12-V and 24-V DC Rails
    • Drives High-Side and Low-Side N-Channel MOSFETs
    • Supports 100% PWM Duty Cycle
  • Smart Gate Drive Architecture
    • Adjustable Slew-Rate Control for Better EMI and EMC Performance
    • VGS Hand-Shake and Minimum Dead-Time Insertion to Avoid Shoot-Through
    • 15-mA to 150-mA Peak Source Current
    • 30-mA to 300-mA Peak Sink Current
  • Integrated Commutation from Hall Sensors
    • 120° Trapezoidal Current Control
    • Supports Low-Cost Hall Elements
    • Tacho Output Signal (FGOUT) for Closed Loop Speed Control
  • Integrated Gate Driver Power Supplies
    • High-Side Charge Pump
    • Low-Side Linear Regulator
  • Cycle-by-Cycle Current Limit
  • Supports 1.8-V, 3.3-V, and 5-V Logic Inputs
  • Low-Power Sleep Mode
  • Linear Voltage Regulator, 3.3 V, 30 mA
  • Compact VQFN Package and Footprint
  • Integrated Protection Features
    • VM Undervoltage Lockout (UVLO)
    • Charge Pump Undervoltage (CPUV)
    • MOSFET Overcurrent Protection (OCP)
    • Gate Driver Fault (GDF)
    • Thermal Shutdown (OTSD)
    • Fault Condition Indicator (nFAULT)

The DRV8306 device is an integrated gate driver for 3-phase brushless DC (BLDC) motor applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8306 device generates the proper gate drive voltages using an integrated charge pump for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The smart gate drive architecture supports up to 150-mA source and 300-mA sink peak gate drive current and 15-mA rms gate drive current capability.

The device provides an internal 120° commutation for the trapezoidal BLDC motor. The DRV8306 device has three Hall comparators which use the input from the Hall elements for internal commutation. The duty cycle ratio of the phase voltage of the motor can be adjusted through the PWM pin. Additional brake (nBRAKE) and direction (DIR) pins are provided for braking and setting the direction of the BLDC motor. A 3.3-V, 30-mA low-dropout (LDO) regulator is provided to supply the external controller and Hall elements. An additional FGOUT signal is provided which is a measure of the commutation frequency. This signal can be used for implementing the closed-loop control of BLDC motor.

A low-power sleep mode is provided to achieve low quiescent current draw by shutting down most of the internal circuitry. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin.

The DRV8306 device is an integrated gate driver for 3-phase brushless DC (BLDC) motor applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8306 device generates the proper gate drive voltages using an integrated charge pump for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The smart gate drive architecture supports up to 150-mA source and 300-mA sink peak gate drive current and 15-mA rms gate drive current capability.

The device provides an internal 120° commutation for the trapezoidal BLDC motor. The DRV8306 device has three Hall comparators which use the input from the Hall elements for internal commutation. The duty cycle ratio of the phase voltage of the motor can be adjusted through the PWM pin. Additional brake (nBRAKE) and direction (DIR) pins are provided for braking and setting the direction of the BLDC motor. A 3.3-V, 30-mA low-dropout (LDO) regulator is provided to supply the external controller and Hall elements. An additional FGOUT signal is provided which is a measure of the commutation frequency. This signal can be used for implementing the closed-loop control of BLDC motor.

A low-power sleep mode is provided to achieve low quiescent current draw by shutting down most of the internal circuitry. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin.

다운로드 스크립트와 함께 비디오 보기 동영상

관심 가지실만한 유사 제품

open-in-new 대안 비교
비교 대상 장치와 유사한 기능
MCT8316Z 활성 최대 40V, 8A 피크, 센서드 사다리꼴 제어 3상 BLDC 모터 드라이버 Next generation device featuring integrated FETs and integrated buck for lower power applications
MCT8329A 활성 60V 무센서 사다리꼴 제어 3상 BLDC 게이트 드라이버 Next generation device for sensorless trapezoidal commutation

기술 자료

star =TI에서 선정한 이 제품의 인기 문서
검색된 결과가 없습니다. 검색어를 지우고 다시 시도하십시오.
7개 모두 보기
유형 직함 날짜
* Data sheet DRV8306 38-V Brushless DC Motor Controller datasheet (Rev. A) PDF | HTML 2018/07/09
Application note Best Practices for Board Layout of Motor Drivers (Rev. B) PDF | HTML 2021/10/14
Application note System Design Considerations for High-Power Motor Driver Applications PDF | HTML 2021/06/22
Application brief Brushless-DC Made Simple – Sensored Motor Control (Rev. B) PDF | HTML 2021/04/13
Application brief Low Voltage Motor Drive Operation With Smart Gate Drive 2018/12/20
Application note Cut-Off Switch in High-Current Motor-Drive Applications (Rev. A) 2018/08/20
EVM User's guide DRV8306EVM User’s Guide 2018/04/03

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

DRV8306EVM — DRV8306 3상 모터 스마트 게이트 드라이버 평가 모듈

The DRV8306 evaluation module (EVM) is an application board designed to allow easy evaluation of the DRV8306 device. The DRV8306 device is a gate driver IC for three-phase motor drive applications. The DRV8306 device provides three high-accuracy trimmed and temperature-compensated half bridge (...)
사용 설명서: PDF
TI.com에서 구매 불가
거버(Gerber) 파일

DRV8306EVM Design Files

SLVC718.ZIP (5641 KB)
패키지 CAD 기호, 풋프린트 및 3D 모델
VQFN (RSM) 32 Ultra Librarian

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

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