제품 상세 정보

Number of full bridges 1 Vs (min) (V) 8 Sleep current (µA) 4.5 Control mode Independent 1/2-Bridge, PWM Control interface SPI Features Current sense Amplifier, Smart Gate Drive Topology External FET, Multi-Channel Rating Automotive Operating temperature range (°C) -40 to 125
Number of full bridges 1 Vs (min) (V) 8 Sleep current (µA) 4.5 Control mode Independent 1/2-Bridge, PWM Control interface SPI Features Current sense Amplifier, Smart Gate Drive Topology External FET, Multi-Channel Rating Automotive Operating temperature range (°C) -40 to 125
VQFN (RGZ) 48 49 mm² (7 mm × 7 mm)
  • AEC-Q100 Test Guidance for automotive applications
    • Device ambient temperature: –40°C to +125°C
  • H-bridge gate driver
    • Drives four N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 8-level configurable peak gate drive current up to 224 / 448mA (source / sink)
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • 1mV low input offset across temperature
    • 4-level adjustable gain
    • Adjustable output bias to support unidirectional or bidirectional sensing
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Dedicated ASCIN pin to control motor braking (active short circuit)
  • 4x and 2x PWM Modes
  • Supports 3.3V and 5V Logic Inputs
  • Protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • AEC-Q100 Test Guidance for automotive applications
    • Device ambient temperature: –40°C to +125°C
  • H-bridge gate driver
    • Drives four N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 8-level configurable peak gate drive current up to 224 / 448mA (source / sink)
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • 1mV low input offset across temperature
    • 4-level adjustable gain
    • Adjustable output bias to support unidirectional or bidirectional sensing
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Dedicated ASCIN pin to control motor braking (active short circuit)
  • 4x and 2x PWM Modes
  • Supports 3.3V and 5V Logic Inputs
  • Protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin

The DRV8762-Q1 is an integrated smart gate driver for 48V automotive H-bridge applications. The device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8762-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 224mA source and 448mA sink. The DRV8762-Q1 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.

The DRV8762-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV8762-Q1 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV8762-Q1 is an integrated smart gate driver for 48V automotive H-bridge applications. The device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8762-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 224mA source and 448mA sink. The DRV8762-Q1 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.

The DRV8762-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV8762-Q1 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

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* 데이터 시트 DRV8762-Q1 48V Battery H-Bridge Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring datasheet PDF | HTML 2026. 5. 14

설계 및 개발

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평가 보드

DRV8762-Q1EVM — DRV8762-Q1 평가 모듈

DRV8762-Q1은 48V 차량용 H-브리지 BDC(브러시 DC) 애플리케이션을 위한 통합 스마트 게이트 드라이버입니다. 이 장치는 저항 기반 저압측 전류 감지를 지원하기 위해 저압측 전류 감지 증폭기를 제공합니다. 증폭기의 낮은 오프셋을 통해 시스템이 모터 전류를 정밀하게 측정할 수 있습니다.

게이트 드라이버는 외부 N채널 고압측 및 저압측 전원 MOSFET을 지원하며 최대 224mA 소스 및 448mA 싱크 피크 전류를 구동할 수 있습니다. 부트스트랩 커패시터는 고압측 게이트 드라이브의 공급 전압을 생성합니다. 저압측 게이트 (...)

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