제품 상세 정보

Supply voltage (min) (V) 2 Supply voltage (max) (V) 6 Number of channels 8 IOL (max) (mA) 7.8 IOH (max) (mA) -7.8 Input type CMOS Output type CMOS Features Balanced outputs, High speed (tpd 10-50ns), Positive input clamp diode Technology family HC Rating Catalog Operating temperature range (°C) -40 to 85
Supply voltage (min) (V) 2 Supply voltage (max) (V) 6 Number of channels 8 IOL (max) (mA) 7.8 IOH (max) (mA) -7.8 Input type CMOS Output type CMOS Features Balanced outputs, High speed (tpd 10-50ns), Positive input clamp diode Technology family HC Rating Catalog Operating temperature range (°C) -40 to 85
SOIC (DW) 24 159.65 mm² 15.5 x 10.3
  • Wide Operating Voltage Range of 2 V to 6 V
  • High-Current 3-State Outputs Can Drive Up To 15 LSTTL Loads
  • Low Power Consumption, 80-µA Max ICC
  • Typical tpd = 11 ns
  • ±6-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Independent Registers and Enables for A and B Buses
  • Multiplexed Real-Time and Stored Data
  • True Data Paths

  • Wide Operating Voltage Range of 2 V to 6 V
  • High-Current 3-State Outputs Can Drive Up To 15 LSTTL Loads
  • Low Power Consumption, 80-µA Max ICC
  • Typical tpd = 11 ns
  • ±6-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Independent Registers and Enables for A and B Buses
  • Multiplexed Real-Time and Stored Data
  • True Data Paths

The ’HC652 devices consist of bus-transceiver circuits, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the data bus or from the internal storage registers. Output-enable (OEAB and OEBA\) inputs are provided to control the transceiver functions. Select-control (SAB and SBA) inputs are provided to select real-time or stored data transfer. A low input level selects real-time data, and a high input level selects stored data. Figure 1 illustrates the four fundamental bus-management functions that can be performed with these devices.

Data on the A or B data bus, or both, can be stored in the internal D-type flip-flops by low-to-high transitions at the appropriate clock (CLKAB or CLKBA) terminals, regardless of the select- or output-control terminals. When SAB and SBA are in the real-time transfer mode, it is possible to store data without using the internal D-type flip-flops by simultaneously enabling OEAB and OEBA\. In this configuration, each output reinforces its input. When all other data sources to the two sets of bus lines are at high impedance, each set of bus lines remains at its last state.

To ensure the high-impedance state during power up or power down, OEBA\ should be tied to VCC through a pullup resistor, and OEAB should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

The ’HC652 devices consist of bus-transceiver circuits, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the data bus or from the internal storage registers. Output-enable (OEAB and OEBA\) inputs are provided to control the transceiver functions. Select-control (SAB and SBA) inputs are provided to select real-time or stored data transfer. A low input level selects real-time data, and a high input level selects stored data. Figure 1 illustrates the four fundamental bus-management functions that can be performed with these devices.

Data on the A or B data bus, or both, can be stored in the internal D-type flip-flops by low-to-high transitions at the appropriate clock (CLKAB or CLKBA) terminals, regardless of the select- or output-control terminals. When SAB and SBA are in the real-time transfer mode, it is possible to store data without using the internal D-type flip-flops by simultaneously enabling OEAB and OEBA\. In this configuration, each output reinforces its input. When all other data sources to the two sets of bus lines are at high impedance, each set of bus lines remains at its last state.

To ensure the high-impedance state during power up or power down, OEBA\ should be tied to VCC through a pullup resistor, and OEAB should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

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관심 가지실만한 유사 제품

open-in-new 대안 비교
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능
CD74HC245 활성 3상 출력을 지원하는 고속 CMOS 로직 비인버팅 8진 버스 트랜시버 Voltage range (2V to 6V), average drive strength (8mA), average propagation delay (20ns)

기술 자료

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14개 모두 보기
유형 직함 날짜
* Data sheet SN54HC652, SN74HC652 datasheet (Rev. E) 2003/03/18
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 2021/07/26
Selection guide Logic Guide (Rev. AB) 2017/06/12
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015/12/02
User guide LOGIC Pocket Data Book (Rev. B) 2007/01/16
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004/07/08
User guide Signal Switch Data Book (Rev. A) 2003/11/14
Application note TI IBIS File Creation, Validation, and Distribution Processes 2002/08/29
Application note CMOS Power Consumption and CPD Calculation (Rev. B) 1997/06/01
Application note Designing With Logic (Rev. C) 1997/06/01
Application note Input and Output Characteristics of Digital Integrated Circuits 1996/10/01
Application note Live Insertion 1996/10/01
Application note SN54/74HCT CMOS Logic Family Applications and Restrictions 1996/05/01
Application note Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc 1996/04/01

설계 및 개발

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평가 보드

14-24-LOGIC-EVM — 14핀~24핀 D, DB, DGV, DW, DYY, NS 및 PW 패키지용 로직 제품 일반 평가 모듈

14-24-LOGIC-EVM 평가 모듈(EVM)은 14핀~24핀 D, DW, DB, NS, PW, DYY 또는 DGV 패키지에 있는 모든 로직 장치를 지원하도록 설계되었습니다.

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주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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