전력 관리 무접점 릴레이

TPSI2072-Q1

활성

2mA 애벌랜치 등급의 차량용, 2채널 600V, 50mA 절연 스위치

이 제품의 최신 버전이 있습니다

open-in-new 대안 비교
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능
신규 TPSI2260-Q1 활성 강화 절연 및 애벌랜치 보호를 지원하는 차량용 600V, 50mA 절연 스위치 Automotive 600V, 50mA Isolated Switch with Reinforced Isolation. Improved Emissions.

제품 상세 정보

FET Internal Number of channels 2 Switching voltage (max) (V) 600 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 2-mA avalanche current Withstand isolation voltage (VISO) (Vrms) 3750 Imax (mA) 50 Ron (typ) (Ω) 65 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 1 Isolation rating Basic Surge isolation voltage (VIOSM) (VPK) 5000 Working isolation voltage (VIOWM) (Vrms) 1000
FET Internal Number of channels 2 Switching voltage (max) (V) 600 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 2-mA avalanche current Withstand isolation voltage (VISO) (Vrms) 3750 Imax (mA) 50 Ron (typ) (Ω) 65 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 1 Isolation rating Basic Surge isolation voltage (VIOSM) (VPK) 5000 Working isolation voltage (VIOWM) (Vrms) 1000
SOIC (DWQ) 11 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C T A
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
      • V HIPOT, 5-s = 4300-V with R series > 1.83-MΩ
      • V HIPOT, 5-s = 2850-V with R series > 1.1-MΩ
    • 600-V standoff voltage
    • R ON = 65-Ω (T J = 25°C)
    • I OFF = 1-µA at 500-V (T J = 105°C)
  • Low primary side supply current
    • 5-mA single channel, 9-mA two channel ON state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 3-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C T A
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
      • V HIPOT, 5-s = 4300-V with R series > 1.83-MΩ
      • V HIPOT, 5-s = 2850-V with R series > 1.1-MΩ
    • 600-V standoff voltage
    • R ON = 65-Ω (T J = 25°C)
    • I OFF = 1-µA at 500-V (T J = 105°C)
  • Low primary side supply current
    • 5-mA single channel, 9-mA two channel ON state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 3-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program

The TPSI2072-Q1 is a two channel isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2072-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2072-Q1 improves system reliability as TI’s capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.

The primary side of the device is powered by only 9 mA of input current and incorporates fail-safe EN1 and EN2 pins preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5 V–20 V and the EN1 and EN2 pins of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, the VDD, EN1, and EN2 pins could be driven together directly from the system supply or from a GPIO output.

Each channel on the secondary side consists of back-to-back MOSFETs with a standoff voltage of +/-600 V from SM to S1 and SM to S2. The TPSI2072-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.

The TPSI2072-Q1 is a two channel isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2072-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2072-Q1 improves system reliability as TI’s capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.

The primary side of the device is powered by only 9 mA of input current and incorporates fail-safe EN1 and EN2 pins preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5 V–20 V and the EN1 and EN2 pins of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, the VDD, EN1, and EN2 pins could be driven together directly from the system supply or from a GPIO output.

Each channel on the secondary side consists of back-to-back MOSFETs with a standoff voltage of +/-600 V from SM to S1 and SM to S2. The TPSI2072-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.

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기술 자료

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5개 모두 보기
유형 직함 날짜
* Data sheet TPSI2072-Q1 2-Channel 600-V, 50-mA, Automotive Isolated Switch with 2-mA Avalanche Rating for Insulation Monitoring and High Voltage Measurements datasheet PDF | HTML 2023/06/30
Application note Basics of Solid-State Relays PDF | HTML 2024/07/24
Functional safety information TPSI2072-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA 2023/06/30
Certificate TPSI2072Q1EVM EU Declaration of Conformity (DoC) 2023/06/27
Product overview When to use SSR or Isolated Gate Driver PDF | HTML 2022/08/04

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

TPSI2072Q1EVM — TPSI2072-Q1 2채널 600V 절연 스위치용 평가 모듈

TPSI2072-Q1은 장치의 기능을 철저하게 평가하기 위해 다중 테스트 포인트와 점퍼를 포함하고 있는 2개 구리층 보드입니다.
사용 설명서: PDF | HTML
TI.com에서 구매 불가
패키지 CAD 기호, 풋프린트 및 3D 모델
SOIC (DWQ) 11 Ultra Librarian

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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