TPSI2260-Q1
- Qualified for automotive applications
- AEC-Q100 grade 1: –40 to 125°C TA
- Low EMI:
- Meets CISPR25 class 5 performance with no additional components
- Integrated avalanche rated MOSFETs
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- TPSI2260-Q1: IAVA =1mA for 60s pulses
- TPSI2260T-Q1: IAVA = 3mA for 60s pulses
- 600V standoff voltage
- RON = 65Ω (TJ = 25°C)
- IOFF = 1.22µA at 500V (TJ = 105°C)
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- Low primary side supply current
- 5mA ON state current
- 3.5µA OFF state current (TJ = 25°C)
- Functional Safety Capable
- Documentation available to aid in ISO 26262 and IEC 61508 system design
- Robust isolation barrier:
- > 30 year projected lifetime at 1500VRMS / 2120DC working voltage
- Reinforced isolation rating, VISO, up to 5000VRMS
- SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
- Creepage and clearance ≥ 8mm (primary-secondary)
- Creepage and clearance ≥ 6mm (across switch terminals)
- Safety-Related Certifications
- (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
- (Planned) UL 1577 component recognition program
The TPSI2260-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2260-Q1 uses TI’s high reliability reinforced capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2260-Q1 improves system reliability as TI’s capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.
The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V to 20V and the EN pin of the device should be driven by a GPIO output with Logic high between 2.1V to 20V. In other applications, the VDD and EN pins could be driven together driven together directly from the system supply or from a GPIO output.
The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±600V from S1 to S2. The TPSI2260-Q1 MOSFET avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (3mA for TPSI2260T-Q1)without requiring any external components.
기술 자료
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | TPSI2260-Q1 600V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection datasheet (Rev. A) | PDF | HTML | 2025/12/03 |
| Functional safety information | TPSI2260-Q1, TPSI2260C-Q1, and TPSI2260T-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. B) | PDF | HTML | 2026/01/26 | |
| Certificate | TPSI2260Q1EVM EU Declaration of Conformity (DoC) | 2025/01/24 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
TPSI2260Q1EVM — TPSI2260-Q1 평가 모듈
TPSI2260Q1EVM은 장치의 성능 및 기능을 모두 평가할 수 있도록 다양한 테스트 포인트와 점퍼가 포함된 하드웨어 평가 모듈(EVM)입니다. 이 평가 모듈에는 고성능 애플리케이션의 전원 시스템의 일부로 설계하기 전에 TPSI2260-Q1을 테스트하고 평가하는 데 필요한 모든 것이 포함되어 있습니다. TPSI2260Q1EVM은 단독으로 사용하거나 장치의 활성화 신호를 구동하기 위해 선택적으로 외부 마이크로컨트롤러와 함께 사용할 수 있습니다. 이 EVM을 사용하여 외부 보호 부품 없이 유전체 내전압 테스트(고전위[HiPot] (...)
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| SOIC (DWQ) | 11 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.