홈 로직 및 전압 변환 전압 변환기 및 레벨 시프터 전압 변환기
홈
로직 및 전압 변환
전압 변환기 및 레벨 시프터
전압 변환기

TXS0206-29

활성

ESD 보호, EMI 필터링 및 2.9V LDO를 사용한 전압 변환을 지원하는 MMC, SD 카드, 메모리 스틱

지금 주문하기
데이터 시트

TXS0206-29

활성
데이터 시트 지금 주문하기

제품 상세 정보

Bits (#) 4 Data rate (max) (Mbps) 60 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.1 Vin (max) (V) 3.6 Vout (min) (V) 0.88 Vout (max) (V) 3.6 Applications MMC, SD Card, SDIO Features EMI filtering, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.011 Rating Catalog Operating temperature range (°C) -40 to 85
Bits (#) 4 Data rate (max) (Mbps) 60 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.1 Vin (max) (V) 3.6 Vout (min) (V) 0.88 Vout (max) (V) 3.6 Applications MMC, SD Card, SDIO Features EMI filtering, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.011 Rating Catalog Operating temperature range (°C) -40 to 85
DSBGA (YFP) 20 3.96 mm² (— mm × — mm)
  • Level Translator
    • VCCA Range of 1.1 V to 3.6 V
    • Fast Propagation Delay (4 ns Max When
      Translating Between 1.8 V and 2.9 V)
  • Low-Dropout (LDO) Regulator
    • 200-mA LDO Regulator With Enable
    • 2.9-V Output Voltage
    • 3.05-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 200 mV at 200 mA
  • ESD Protection Exceeds JESD 22 (A Port)
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • ±8-kV Contact Discharge IEC 61000-4-2 ESD (B Port)

All other trademarks are the property of their respective owners.
  • Level Translator
    • VCCA Range of 1.1 V to 3.6 V
    • Fast Propagation Delay (4 ns Max When
      Translating Between 1.8 V and 2.9 V)
  • Low-Dropout (LDO) Regulator
    • 200-mA LDO Regulator With Enable
    • 2.9-V Output Voltage
    • 3.05-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 200 mV at 200 mA
  • ESD Protection Exceeds JESD 22 (A Port)
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • ±8-kV Contact Discharge IEC 61000-4-2 ESD (B Port)

All other trademarks are the property of their respective owners.

The TXS0206-29 is a complete solution for interfacing microprocessors with MultiMediaCards (MMCs), secure digital (SD) cards, and Memory Stick™ cards. It is comprised of a high-speed level translator, a low-dropout (LDO) voltage regulator, IEC level ESD protection, and EMI filtering circuitry.

The voltage-level translator has two supply voltage pins. VCCA can be operated over the full range of 1.1 V to 3.6 V. VCCB is set at 2.9 V and is supplied by an internal LDO. The integrated LDO accepts input voltages from 3.05 V to as high as 5.5 V and outputs 2.9 V, 200 mA to the B-side circuitry and to the external memory card. The TXS0206-29 enables system designers to easily interface low-voltage microprocessors to memory cards operating at 2.9 V.

Memory card standards recommend high-ESD protection for devices that connect directly to the external memory card. To meet this need, the TXS0206-29 incorporates ±8-kV Contact Discharge protection on the card side.

Since memory cards are widely used in mobile phones, PDAs, digital cameras, personal media players, camcorders, set-top boxes, etc. Low static power consumption and small package size make the TXS0206-29 an ideal choice for these applications. The TXS0206-29 is offered in a 20-bump wafer chip scale package (WCSP). This package has dimensions of 1.96 mm × 1.56 mm, with a 0.4-mm ball pitch for effective board-space savings.

The TXS0206-29 is a complete solution for interfacing microprocessors with MultiMediaCards (MMCs), secure digital (SD) cards, and Memory Stick™ cards. It is comprised of a high-speed level translator, a low-dropout (LDO) voltage regulator, IEC level ESD protection, and EMI filtering circuitry.

The voltage-level translator has two supply voltage pins. VCCA can be operated over the full range of 1.1 V to 3.6 V. VCCB is set at 2.9 V and is supplied by an internal LDO. The integrated LDO accepts input voltages from 3.05 V to as high as 5.5 V and outputs 2.9 V, 200 mA to the B-side circuitry and to the external memory card. The TXS0206-29 enables system designers to easily interface low-voltage microprocessors to memory cards operating at 2.9 V.

Memory card standards recommend high-ESD protection for devices that connect directly to the external memory card. To meet this need, the TXS0206-29 incorporates ±8-kV Contact Discharge protection on the card side.

Since memory cards are widely used in mobile phones, PDAs, digital cameras, personal media players, camcorders, set-top boxes, etc. Low static power consumption and small package size make the TXS0206-29 an ideal choice for these applications. The TXS0206-29 is offered in a 20-bump wafer chip scale package (WCSP). This package has dimensions of 1.96 mm × 1.56 mm, with a 0.4-mm ball pitch for effective board-space savings.
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* 데이터 시트 TXS0206-29 MMC, SD Card, Memory Stick(TM) Voltage-Translation Transceiver datasheet 2009. 12. 2
애플리케이션 노트 Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 2024. 7. 12
애플리케이션 노트 Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024. 7. 3
선택 가이드 Voltage Translation Buying Guide (Rev. A) 2021. 4. 15
애플리케이션 노트 Translate Voltages for SDIO PDF | HTML 2020. 10. 20

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시뮬레이션 모델

TXS0206-29 IBIS Model

SCEM564.ZIP (139 KB) - IBIS 모델
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