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LM5109

ACTIVE

100V / 1A peak half bridge gate driver

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LM2101 ACTIVE 107-V, 0.5-A/0.8-A half-bridge gate driver with 8-V UVLO Newer device with similar electrical characteristics

Product details

Power switch MOSFET Operating temperature range (°C) to Undervoltage lockout (typ) (V) 8 Rating Catalog
Power switch MOSFET Operating temperature range (°C) to Undervoltage lockout (typ) (V) 8 Rating Catalog
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Drives both a high side and low side N-Channel MOSFET
  • 1A peak output current (1.0A sink / 1.0A source)
  • Independent TTL compatible inputs
  • Bootstrap supply voltage to 118V DC
  • Fast propagation times (27 ns typical)
  • Drives 1000 pF load with 15ns rise and fall times
  • Excellent propagation delay matching (2 ns typical)
  • Supply rail under-voltage lockout
  • Low power consumption
  • Pin compatible with ISL6700

  • Drives both a high side and low side N-Channel MOSFET
  • 1A peak output current (1.0A sink / 1.0A source)
  • Independent TTL compatible inputs
  • Bootstrap supply voltage to 118V DC
  • Fast propagation times (27 ns typical)
  • Drives 1000 pF load with 15ns rise and fall times
  • Excellent propagation delay matching (2 ns typical)
  • Supply rail under-voltage lockout
  • Low power consumption
  • Pin compatible with ISL6700

The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.


The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.


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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet LM5109 100V / 1A Peak Half Bridge Gate Driver datasheet Apr 26, 2005
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML Mar 25, 2024
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML Sep 8, 2023
Application note Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML Feb 17, 2022
Application brief External Gate Resistor Selection Guide (Rev. A) Feb 28, 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) Feb 28, 2020
White paper Power Electronics in Motor Drives: Where is it? (Rev. A) Oct 1, 2019
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) Oct 29, 2018

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SOIC (D) 8 Ultra Librarian

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