產品詳細資料

Vs (min) (V) 4.5 Vs ABS (max) (V) 40 Control mode PWM Control interface SPI Features Current sense Amplifier, Current sense output, Open-Load Detection Rating Automotive Operating temperature range (°C) -40 to 125
Vs (min) (V) 4.5 Vs ABS (max) (V) 40 Control mode PWM Control interface SPI Features Current sense Amplifier, Current sense output, Open-Load Detection Rating Automotive Operating temperature range (°C) -40 to 125
VQFN (RGZ) 48 49 mm² 7 x 7
  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • 4.5V to 35V (40V abs. max) operating range
  • H-bridge or dual-channel half-bridge gate drivers
    • Smart gate drive architecture
    • Tripler charge pump for 100% PWM
    • Wide common mode current shunt amplifier
  • 1 Integrated Half-bridge with IOUT Max 8A (RDSON = 132mΩ, 66mΩ per FET)
  • 1 Integrated Half-bridge with IOUT Max 7A (RDSON = 160mΩ, 80mΩ per FET)
  • 2 Integrated Half-bridges with IOUT Max 4A (RDSON = 400mΩ, 200mΩ per FET)
  • 2 Integrated Half-bridges with IOUT Max 1.3A load (RDSON = 1500mΩ, 750mΩ per FET)
  • 1 Configurable Integrated High-side driver as Lamp or LED driver with IOUT Max 1.5/0.5A (RDSON = 0.4/1.5Ω)
  • 5 Integrated High-side drivers for 0.5/0.25A load (RDSON = 1.5Ω)
    • 1 High-side driver to supply electro chromic (EC) glass MOSFET
  • 1 external MOSFET gate driver for charge of electro chromic glass
  • 1 integrated Low-side FET for discharge of electro chromic glass
  • Internal 10bit PWM generator for high-side drivers
  • All high-side drivers support a low- or high- current threshold constant current mode to drive a wide range of LED modules
  • 1 external MOSFET gate driver for heater
    • Offline open load detection
    • VDS monitoring of low RDSON MOSFET for short circuit detection
  • Integrated driver output features Current regulation (ITRIP)
  • Muxable sense output (IPROPI)
    • Internal current sensing with proportional current output (IPROPI)
    • Advanced die temperature monitoring with multiple thermal clusters
    • Scaled supply voltage output
  • Protection and diagnostic features with configurable fault behavior
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Over current and over temperature protection
  • Device Comparison Table
  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • 4.5V to 35V (40V abs. max) operating range
  • H-bridge or dual-channel half-bridge gate drivers
    • Smart gate drive architecture
    • Tripler charge pump for 100% PWM
    • Wide common mode current shunt amplifier
  • 1 Integrated Half-bridge with IOUT Max 8A (RDSON = 132mΩ, 66mΩ per FET)
  • 1 Integrated Half-bridge with IOUT Max 7A (RDSON = 160mΩ, 80mΩ per FET)
  • 2 Integrated Half-bridges with IOUT Max 4A (RDSON = 400mΩ, 200mΩ per FET)
  • 2 Integrated Half-bridges with IOUT Max 1.3A load (RDSON = 1500mΩ, 750mΩ per FET)
  • 1 Configurable Integrated High-side driver as Lamp or LED driver with IOUT Max 1.5/0.5A (RDSON = 0.4/1.5Ω)
  • 5 Integrated High-side drivers for 0.5/0.25A load (RDSON = 1.5Ω)
    • 1 High-side driver to supply electro chromic (EC) glass MOSFET
  • 1 external MOSFET gate driver for charge of electro chromic glass
  • 1 integrated Low-side FET for discharge of electro chromic glass
  • Internal 10bit PWM generator for high-side drivers
  • All high-side drivers support a low- or high- current threshold constant current mode to drive a wide range of LED modules
  • 1 external MOSFET gate driver for heater
    • Offline open load detection
    • VDS monitoring of low RDSON MOSFET for short circuit detection
  • Integrated driver output features Current regulation (ITRIP)
  • Muxable sense output (IPROPI)
    • Internal current sensing with proportional current output (IPROPI)
    • Advanced die temperature monitoring with multiple thermal clusters
    • Scaled supply voltage output
  • Protection and diagnostic features with configurable fault behavior
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Over current and over temperature protection
  • Device Comparison Table

The DRV8000-Q1 device integrates multiple types of drivers intended for multiple functions: driving and diagnosing motor (inductive), resistive and capacitive loads. The device features two half-bridge gate drivers, 6 integrated half-bridges, 6 integrated high-side drivers, one external high-side gate driver for heater, one external high-side gate driver for electrochromic charge and one integrated low-side driver for electrochromic load discharge. Each individual driver has PWM input control options, sensing and diagnostics, along with device system protection and diagnostics. There are also dedicated programmable PWM generators for each high-side driver. Proportional current sense pin output is available for all integrated drivers, along with a robust and flexible current shunt amplifier for the gate driver.

The high-side and low-side drivers can be used to drive MOSFETs for special loads such as heating element or electro-chromic elements. These drivers include offline and active diagnostics.

The device provides protection features such as under and over voltage monitors, offline open load and short circuit diagnostics, and zone-based thermal monitoring and shutdown protection.

The DRV8000-Q1 device integrates multiple types of drivers intended for multiple functions: driving and diagnosing motor (inductive), resistive and capacitive loads. The device features two half-bridge gate drivers, 6 integrated half-bridges, 6 integrated high-side drivers, one external high-side gate driver for heater, one external high-side gate driver for electrochromic charge and one integrated low-side driver for electrochromic load discharge. Each individual driver has PWM input control options, sensing and diagnostics, along with device system protection and diagnostics. There are also dedicated programmable PWM generators for each high-side driver. Proportional current sense pin output is available for all integrated drivers, along with a robust and flexible current shunt amplifier for the gate driver.

The high-side and low-side drivers can be used to drive MOSFETs for special loads such as heating element or electro-chromic elements. These drivers include offline and active diagnostics.

The device provides protection features such as under and over voltage monitors, offline open load and short circuit diagnostics, and zone-based thermal monitoring and shutdown protection.

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* Data sheet DRV8000-Q1 Automotive Highly-integrated, Multi-function Driver for Door Control datasheet PDF | HTML 2024年 5月 29日

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DRV8000-Q1EVM — DRV80000-Q1 評估模組

DRV8000-Q1 評估模組 (EVM) 可用於輕鬆評估 DRV8000-Q1 裝置。EVM 已進行程式設計,並配置為可立即使用並開始驅動負載。此 EVM 展現具備半橋式閘極驅動器的整合驅動器、六個整合式半橋、六個整合式高壓側驅動器、一個用於加熱器的外部高壓側閘極驅動器、一個用於電致變色充電的外部高壓側閘極驅動器,以及一個用於電致變色負載放電的整合式低壓側驅動器。此產品搭載防護功能,例如欠電壓與過電壓監控器、離線開放負載及短路診斷,以及區域型熱監控和關機保護。此產品亦也具備可多工感測輸出 (IPROPI) 和整合電流穩壓 (ITRIP)。EVM 附帶 GUI 應用以輕鬆控制馬達驅動器。

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