產品詳細資料

Rating Automotive, Catalog Architecture Gate driver Vs (min) (V) 8 Vs ABS (max) (V) 115 Operating temperature range (°C) -40 to 125 TI functional safety category Functional Safety Quality-Managed
Rating Automotive, Catalog Architecture Gate driver Vs (min) (V) 8 Vs ABS (max) (V) 115 Operating temperature range (°C) -40 to 125 TI functional safety category Functional Safety Quality-Managed
VSSOP (DGS) 20 24.99 mm² 5.1 x 4.9
  • Drives two N-channel MOSFETs in half-bridge configuration
    • High-side MOSFET source/drain up to 102V (absolute max)
    • 8V (5V DRV8162L) to 20V gate drive power supply
    • Integrated bootstrap diode
  • Functional Safety Quality-Managed
    • Documentation available to aid functional safety system design
  • Supports 100% PWM duty cycle with an integrated trickle charge pump
  • 16-level gate drive peak current
    • 16mA - 1000mA source current
    • 32mA - 2000mA sink current
    • Source-sink current ratio 1:1, 1:2, 1:3
  • Adjustable PWM dead time insertion 20ns - 900ns
  • Robust design for motor phase (SH) switching
    • Slew rate 50V/ns
    • Negative transient voltage -20V
    • 2A strong gate pull down
  • Split gate drive supply inputs for redundant shutdown (DRV8162, DRV8162L)
  • Low-offset current sense amplifier (DRV8161)
    • Adjustable gain (5, 10, 20, 40V/V)
  • Flexible PWM control interface; 2-pin PWM, 1-pin PWM, and independent PWM mode
  • 13-level VDS over current threshold
  • Independent shutdown pin (nDRVOFF)
  • Gate driver soft shutdown sequence
  • Integrated protection features
    • GVDD under voltage (GVDDUV)
    • Bootstrap under voltage (BST_UV)
    • MOSFET over current protection (VDS)
    • Shoot through protection
    • Thermal shutdown (OTSD)
    • Fault condition indicator (nFAULT)
  • Supports 3.3V, and 5V Logic Inputs
  • Drives two N-channel MOSFETs in half-bridge configuration
    • High-side MOSFET source/drain up to 102V (absolute max)
    • 8V (5V DRV8162L) to 20V gate drive power supply
    • Integrated bootstrap diode
  • Functional Safety Quality-Managed
    • Documentation available to aid functional safety system design
  • Supports 100% PWM duty cycle with an integrated trickle charge pump
  • 16-level gate drive peak current
    • 16mA - 1000mA source current
    • 32mA - 2000mA sink current
    • Source-sink current ratio 1:1, 1:2, 1:3
  • Adjustable PWM dead time insertion 20ns - 900ns
  • Robust design for motor phase (SH) switching
    • Slew rate 50V/ns
    • Negative transient voltage -20V
    • 2A strong gate pull down
  • Split gate drive supply inputs for redundant shutdown (DRV8162, DRV8162L)
  • Low-offset current sense amplifier (DRV8161)
    • Adjustable gain (5, 10, 20, 40V/V)
  • Flexible PWM control interface; 2-pin PWM, 1-pin PWM, and independent PWM mode
  • 13-level VDS over current threshold
  • Independent shutdown pin (nDRVOFF)
  • Gate driver soft shutdown sequence
  • Integrated protection features
    • GVDD under voltage (GVDDUV)
    • Bootstrap under voltage (BST_UV)
    • MOSFET over current protection (VDS)
    • Shoot through protection
    • Thermal shutdown (OTSD)
    • Fault condition indicator (nFAULT)
  • Supports 3.3V, and 5V Logic Inputs

The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture supports 16-level (48 combination) gate drive peak current up to 1A source and 2A sink, and a built-in timing control of gate drive current. The devices can be used to drive various types of loads including brushless/brushed DC motors, PMSM, stepper motors, SRM, and solenoids.

Internal protection functions are provided for supply undervoltage, FET over-current, and die over temperature. The nFAULT pin indicates fault events detected by the protection features. The nDRVOFF pin initiates power stage shutdown independent from PWM control. The DRV8162 and DRV8162L devices offer split power supply architecture to assist safe torque off (STO) function.

Many device parameters including gate drive current, dead time, PWM control interface, and over current detection are configurable with a few passive components connected to device pins. An integrated low-side current sense amplifier (DRV8161) provides current measurement information back to the controller.

The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture supports 16-level (48 combination) gate drive peak current up to 1A source and 2A sink, and a built-in timing control of gate drive current. The devices can be used to drive various types of loads including brushless/brushed DC motors, PMSM, stepper motors, SRM, and solenoids.

Internal protection functions are provided for supply undervoltage, FET over-current, and die over temperature. The nFAULT pin indicates fault events detected by the protection features. The nDRVOFF pin initiates power stage shutdown independent from PWM control. The DRV8162 and DRV8162L devices offer split power supply architecture to assist safe torque off (STO) function.

Many device parameters including gate drive current, dead time, PWM control interface, and over current detection are configurable with a few passive components connected to device pins. An integrated low-side current sense amplifier (DRV8161) provides current measurement information back to the controller.

下載 觀看有字幕稿的影片 影片

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件,然後再試一次。
檢視所有 6
類型 標題 日期
* Data sheet DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier datasheet (Rev. C) PDF | HTML 2025年 2月 18日
Application brief Gate Driver Design Requirements for Humanoid Robot Motor Drives 2025年 5月 21日
Application note Relating Payload to Brushless DC Motor Driver Specifications PDF | HTML 2024年 12月 2日
Technical article 協作機器人到人形裝置:將系統效率與安全性推向更高功率的 機器人 PDF | HTML 2024年 12月 2日
Application note Three-Phase vs Three-Single Half-Bridge Gate Drivers PDF | HTML 2024年 11月 24日
Design guide 48V, 85A Small Form-Factor Three-Phase Inverter Reference Design for Integrated Motor Drives (Rev. B) PDF | HTML 2024年 8月 2日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

DRV8161EVM — DRV8161 評估模組

DRV8161 評估模組 (EVM) 是一款 30A 三相無刷 DC 驅動級,使用三個用於旋轉 BLDC 馬達的 DRV8161 閘極驅動器。此 EVM 可快速評估 DRV8161 產品,其會利用梯形整流和控制轉動 BLDC 馬達。
使用指南: PDF | HTML
TI.com 無法提供
參考設計

TIDA-010956 — 三相馬達驅動參考設計:整合式馬達驅動專用 48V、85A 小型三相逆變器

此參考設計支援 48V DC 輸入、85ARMS輸出,並搭載三相馬達驅動逆變器。DRV8162L 為 100V 智慧型半橋閘極驅動器,可實現體積小巧、堅固且高效率的功率級設計。提出了多通道關機路徑使用 DRV8162L 分離式電源供應架構,以實現安全扭矩關閉 (STO) 功能。DRV8162L 的內建 VDS 偵測與保護功能可防止過電流故障。相位 A 與 B 的馬達電流感測由 INA241A 精密感測器負責;相位 C 則使用 AMC0106M05 功能隔離型 delta-sigma 調變器。設計亦提供 3.3V I/O 介面,可連接主控器 (如 C2000™ MCU),以利快速驗證。
Design guide: PDF
參考設計

TIDA-01629 — 48V/500W 三相逆變器,具有用於伺服驅動器的智慧閘極驅動器參考設計

對於高達 60VDC 的精巧 DC 饋電驅動器來說,效率,保護及整合是重要的設計因素。此參考設計展示了額定 48VDC 輸入和 10ARMS 輸出電流的三相位逆變器。  100V 智慧型三相閘極驅動器 DRV8350R 搭載整合式降壓轉換器,以及配備超低閘極充電的六個 100V NexFET™ 功率 MOSFET,可實現功率級的高效運行。  使用 DRV8350R 的內部保護功能,可防止功率級過熱、過電流及馬達端子與馬達端子接地之間短路。使用 INA240 實現精密的相位電流感測。此介面為 3.3V I/O,可連接 C2000™ MCU 等主機 MCU,以進行無刷 AC 馬達控制。
Design guide: PDF
電路圖: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
VSSOP (DGS) 20 Ultra Librarian

訂購與品質

內含資訊:
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

內容係由 TI 和社群貢獻者依「現狀」提供,且不構成 TI 規範。檢視使用條款

若有關於品質、封裝或訂購 TI 產品的問題,請參閱 TI 支援。​​​​​​​​​​​​​​

影片