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DRV8263-Q1

現行

具有診斷和內部電流感測功能的車用 48V 全橋馬達驅動器

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產品規格表

DRV8263-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of full bridges 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 70 Peak output current (A) 26 RDS(ON) (HS + LS) (mΩ) 85 Sleep current (µA) 5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Current Regulation, Current sense Amplifier, Integrated Current Sensing, Open-Load Detection Topology Integrated FET Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125
Number of full bridges 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 70 Peak output current (A) 26 RDS(ON) (HS + LS) (mΩ) 85 Sleep current (µA) 5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Current Regulation, Current sense Amplifier, Integrated Current Sensing, Open-Load Detection Topology Integrated FET Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125
VQFN-HR (VAK) 15 21 mm² 3.5 x 6

  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA

  • Functional Safety-Compliant Targeted

    • Documentation available to aid functional safety system design
  • 4.5V to 65V (70V abs. max) operating range
  • DRV8263-Q1 MOSFET ON resistance (HS + LS): 85mΩ
  • Maximum output current = 28A
  • Configurable control modes
    • Single full-bridge, PH/EN, or PWM interface
    • Two half-bridges using Independent mode
  • 2 Interface options - HW or SPI
  • PWM frequency operation up to 100kHz with automatic dead time assertion
  • Configurable slew rate and spread spectrum clocking for low electromagnetic interference (EMI)
  • Integrated current sense (eliminates shunt resistor)
  • Proportional load current output on IPROPI

  • Die temperature monitoring on IPROPI (SPI only)

  • Configurable current regulation
  • Protection and diagnostic features with configurable fault reaction (latched or retry)
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Voltage monitoring on supply (VM)
    • Over current protection

    • Over temperature warning (SPI only)

    • Over temperature protection

    • Powered off Braking

    • Fault indication on nFAULT pin
  • Supports 1.8V, 3.3V, 5V logic inputs
  • Low sleep current - 7µA typical at 25°C
  • Device family comparison table

  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA

  • Functional Safety-Compliant Targeted

    • Documentation available to aid functional safety system design
  • 4.5V to 65V (70V abs. max) operating range
  • DRV8263-Q1 MOSFET ON resistance (HS + LS): 85mΩ
  • Maximum output current = 28A
  • Configurable control modes
    • Single full-bridge, PH/EN, or PWM interface
    • Two half-bridges using Independent mode
  • 2 Interface options - HW or SPI
  • PWM frequency operation up to 100kHz with automatic dead time assertion
  • Configurable slew rate and spread spectrum clocking for low electromagnetic interference (EMI)
  • Integrated current sense (eliminates shunt resistor)
  • Proportional load current output on IPROPI

  • Die temperature monitoring on IPROPI (SPI only)

  • Configurable current regulation
  • Protection and diagnostic features with configurable fault reaction (latched or retry)
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Voltage monitoring on supply (VM)
    • Over current protection

    • Over temperature warning (SPI only)

    • Over temperature protection

    • Powered off Braking

    • Fault indication on nFAULT pin
  • Supports 1.8V, 3.3V, 5V logic inputs
  • Low sleep current - 7µA typical at 25°C
  • Device family comparison table

The DRV8263-Q1 is a wide-voltage, high-power fully integrated H-bridge driver for 24V and 48V automotive applications. Designed in a BiCMOS high-power process technology node, this device in a power package offers excellent power handling and thermal capability while providing compact package size, ease of layout, EMI control, accurate current sense, robustness, and diagnostic capability.

The device integrates a N-channel H-bridge, charge pump, high-side current sensing with regulation, current proportional output, and protection circuitry. The integrated sensing uses a current mirror, removing the need for shunt resistors, saving board area, and reducing system cost. A low-power sleep mode is provided to achieve low quiescent current.

The device offers voltage monitoring and load diagnostics, as well as protection features against overcurrent and overtemperature. Fault conditions are indicated on the nFAULT pin. The device is available in two variants: HW interface and SPI. The SPI variant offers more flexibility in device configuration and fault observability.

The DRV8263-Q1 is a wide-voltage, high-power fully integrated H-bridge driver for 24V and 48V automotive applications. Designed in a BiCMOS high-power process technology node, this device in a power package offers excellent power handling and thermal capability while providing compact package size, ease of layout, EMI control, accurate current sense, robustness, and diagnostic capability.

The device integrates a N-channel H-bridge, charge pump, high-side current sensing with regulation, current proportional output, and protection circuitry. The integrated sensing uses a current mirror, removing the need for shunt resistors, saving board area, and reducing system cost. A low-power sleep mode is provided to achieve low quiescent current.

The device offers voltage monitoring and load diagnostics, as well as protection features against overcurrent and overtemperature. Fault conditions are indicated on the nFAULT pin. The device is available in two variants: HW interface and SPI. The SPI variant offers more flexibility in device configuration and fault observability.
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類型 標題 日期
* Data sheet DRV8263-Q1 Automotive 65V H-Bridge Driver with Integrated Current Sense and Diagnostics datasheet (Rev. A) PDF | HTML 2025年 8月 28日
Application note Calculating Power Dissipation for a H-Bridge or Half Bridge Driver (Rev. A) PDF | HTML 2021年 7月 22日

設計與開發

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開發板

DRV8263H-Q1EVM — 適用於硬體版本的 DRV8263-Q1 評估模組

DRV8263H-Q1 EVM 評估模組 (EVM) 展示 DRV8263H HotRod™ 封裝的功能和性能。DRV8263H-Q1 是完全整合的半橋式驅動器，適用各種汽車應用。H 橋驅動器適用於具 4.5 V 至 65 V 操作電壓與 26A 最大輸出電流的高電流應用。
使用指南: PDF | HTML
TI.com 無法提供
開發板

DRV8263S-Q1EVM — 適用於 SPI 版本的 DRV8263-Q1 評估模組

DRV8263S-Q1 EVM 評估模組 (EVM) 展示 DRV8263S HotRod™ 封裝的功能和性能。DRV8263S-Q1 是完全整合的半橋式驅動器，適用各種汽車應用。H 橋驅動器適用於具 4.5 V 至 65 V 操作電壓與 26A 最大輸出電流的高電流應用。

使用指南: PDF | HTML
TI.com 無法提供
參考設計

TIDA-020094 — 48V zone reference design

This reference design demonstrates trends in advanced automotive 48V low voltage rail architectures. The design includes the 48V backbone architecture and 48V to 12V power conversion. The reference design highlights 48V load drivers across key products. These products include high side switches (...)
Design guide: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN-HR (VAK) 15 Ultra Librarian
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  • 認證摘要
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