產品詳細資料

Rating Automotive Architecture Gate driver Control interface 3xPWM, 6xPWM Gate drive (A) 0.75 Vs (min) (V) 5 Vs ABS (max) (V) 100 Features Bootstrap Diode Operating temperature range (°C) -40 to 125
Rating Automotive Architecture Gate driver Control interface 3xPWM, 6xPWM Gate drive (A) 0.75 Vs (min) (V) 5 Vs ABS (max) (V) 100 Features Bootstrap Diode Operating temperature range (°C) -40 to 125
TSSOP (PW) 20 41.6 mm² (6.5 mm × 6.4 mm)
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C ≤ TA ≤ 125°C
  • 100-V Three Phase Half-Bridge Gate driver
    • Drives N-Channel MOSFETs (NMOS)
    • Gate Driver Supply (GVDD): 5-20 V
    • MOSFET supply (SHx) support upto 100 V
  • Integrated Bootstrap Diodes
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A sink current
  • Supports up to 48-V auto systems
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 115-V
  • Supports negative transients upto -22-V on SHx
  • Built-in cross conduction prevention
  • Fixed deadtime insertion of 215 ns
  • Supports 3.3-V and 5-V logic inputs with 20 V Abs max
  • 4 nS typical propogation delay matching
  • Compact TSSOP package
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C ≤ TA ≤ 125°C
  • 100-V Three Phase Half-Bridge Gate driver
    • Drives N-Channel MOSFETs (NMOS)
    • Gate Driver Supply (GVDD): 5-20 V
    • MOSFET supply (SHx) support upto 100 V
  • Integrated Bootstrap Diodes
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A sink current
  • Supports up to 48-V auto systems
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 115-V
  • Supports negative transients upto -22-V on SHx
  • Built-in cross conduction prevention
  • Fixed deadtime insertion of 215 ns
  • Supports 3.3-V and 5-V logic inputs with 20 V Abs max
  • 4 nS typical propogation delay matching
  • Compact TSSOP package
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)

DRV8300 -Q1 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300 -Q1 generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (115-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

DRV8300 -Q1 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300 -Q1 generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (115-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

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DRV8300 現行 具有自舉二極體的最大 100-V 簡單 3 相閘極驅動器 Industrial qualified version

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 DRV8300-Q1: 100-V Three-Phase BLDC Gate Driver datasheet PDF | HTML 2021/12/8
Application brief Understanding Gate Driver Slew Rate Control, MOSFET Switching Optimization and Protection Features (Rev. A) PDF | HTML 2025/12/11
證書 DRV8300DPW-Q1EVM EU RoHS Declaration of Conformity (DoC) 2021/12/8

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DRV8300DPW-Q1EVM — 適用於三相 BLDC 閘極驅動器的 DRV8300DPW-Q1 評估模組

DRV8300DPW-Q1EVM 是以 BLDC 馬達 DRV8300DPWRQ1 閘極驅動器為基礎的 30-A、3 相無刷 DC 驅動級。  

DRV8300DPWRQ1 包含三個二極體以供靴帶運作,無需使用外部二極體。EVM 包括三個電流分流放大器,適用於低壓側電流量測,以及 PVDD/GVDD 電壓和基板溫度的回饋。可向 EVM 提供最高 100V 電壓,而板載降壓則可產生靴帶式 GVDD 供應所需的 12V 電壓。所有電源供應器的狀態 LED 及故障 LED 均包含在內,以供使用者回饋。

此套件需要 C2000 launchpad (LAUNCHXL-F280049C),用於控制 (...)

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MSP-MOTOR-CONTROL — MSPM0 Firmware solutions for motor control applications

MSP 馬達控制為一系列軟體、工具和範例,可在 30 分鐘或更短時間內運用 MSPM0 Arm® Cortex® M0+ MCU 和熱門馬達驅動器解決方案來運轉馬達。

MSP 馬達控制提供可轉動有刷、步進與三相馬達的受支援硬體套件範例,具備最佳性能、整合性與易用性的感測和無感測器控制演算法。透過訂購硬體、連接馬達及使用我們的圖形使用者介面或線上程式碼範例,可隨時運轉您的馬達。

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