DRV8300
- 100-V Three Phase
Half-Bridge Gate driver
- Drives N-Channel MOSFETs (NMOS)
- Gate Driver Supply (GVDD): 5-20 V
- MOSFET supply (SHx) support upto 100 V
- Integrated Bootstrap Diodes (DRV8300D devices)
- Supports Inverting and Non-Inverting INLx inputs
- Bootstrap gate drive architecture
- 750-mA source current
- 1.5-A sink current
- Supports up to 15S battery powered applications
- Low leakage current on SHx pins (<55 µA)
- Absolute maximum BSTx voltage upto 125-V
- Supports negative transients upto -22-V on SHx
- Built-in cross conduction prevention
- Adjustable deadtime through DT pin for QFN package variants
- Fixed deadtime insertion of 200 nS for TSSOP package variants
- Supports 3.3-V and 5-V logic inputs with 20 V Abs max
- 4 nS typical propogation delay matching
- Compact QFN and TSSOP packages
- Efficient system design with Power Blocks
- Integrated protection features
- BST undervoltage lockout (BSTUV)
- GVDD undervoltage (GVDDUV)
DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.
The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | DRV8300: 100-V Three-Phase BLDC Gate Driver datasheet (Rev. D) | PDF | HTML | 2021/11/22 | ||
| 應用說明 | Brushless-DC Motor Driver Considerations and Selection Guide (Rev. A) | PDF | HTML | 2022/5/16 | |||
| 應用說明 | Hardware Design Considerations for an Electric Bicycle using BLDC Motor (Rev. B) | 2021/6/23 | ||||
| 應用說明 | System Design Considerations for High-Power Motor Driver Applications | PDF | HTML | 2021/6/22 | |||
| 證書 | DRV8300DRGE-EVM EU RoHS Declaration of Conformity (DoC) | 2021/2/4 | ||||
| 證書 | DRV8300DIPW-EVM EU RoHS Declaration of Conformity (DoC) | 2020/12/23 |
設計與開發
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DRV8300DIPW-EVM — 適用於三相 BLDC 的 DRV8300DIPW 評估模組
DRV8300DIPW-EVM 是以 BLDC 馬達之 DRV8300DIPW 閘極驅動器為基礎的 30A、3 相無刷 DC 驅動級。DRV8300DIPW 包含三個二極體以供靴帶運作，無需使用外部二極體。
EVM 包括三個電流分流放大器，適用於低壓側電流量測，以及 PVDD/GVDD 電壓和基板溫度的回饋。可向 EVM 提供最高 100V 電壓，而板載降壓則可產生靴帶式 GVDD 供應所需的 12V 電壓。所有電源供應器的狀態 LED 及故障 LED 均包含在內，以供使用者回饋。
此套件需要 C2000 launchpad (LAUNCHXL-F280049C)，用於控制 (...)
DRV8300DRGE-EVM — DRV8300DRGE 三相 BLDC 評估模組
DRV8300DRGE-EVM 是以 BLDC 馬達之 DRV8300DRGE 閘極驅動器為基礎的 30A、3 相無刷 DC 驅動級。
DRV8300DRGE 包含三個二極體以供靴帶運作，無需使用外部二極體。EVM 包括三個電流分流放大器，適用於低壓側電流量測，以及 PVDD/GVDD 電壓和基板溫度的回饋。可向 EVM 提供最高 100V 電壓，而板載降壓則可產生靴帶式 GVDD 供應所需的 12V 電壓。
所有電源供應器的狀態 LED 及故障 LED 均包含在內，以供使用者回饋。此套件需要 C2000 launchpad (LAUNCHXL-F280049C)，用於控制 (...)
MSP-MOTOR-CONTROL — MSPM0 Firmware solutions for motor control applications
MSP 馬達控制為一系列軟體、工具和範例，可在 30 分鐘或更短時間內運用 MSPM0 Arm® Cortex® M0+ MCU 和熱門馬達驅動器解決方案來運轉馬達。
MSP 馬達控制提供可轉動有刷、步進與三相馬達的受支援硬體套件範例，具備最佳性能、整合性與易用性的感測和無感測器控制演算法。透過訂購硬體、連接馬達及使用我們的圖形使用者介面或線上程式碼範例，可隨時運轉您的馬達。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| TSSOP (PW) | 20 | Ultra Librarian |
| VQFN (RGE) | 24 | Ultra Librarian |