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DRV8353F

現行

具有 3x CSA 的 102V 最大 3 相位功能安全品質管理智慧型閘極驅動器

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產品規格表

DRV8353F

現行
產品規格表 立即訂購

產品詳細資料

Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Current sense Amplifier, Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125 TI functional safety category Functional Safety Quality-Managed
Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Current sense Amplifier, Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125 TI functional safety category Functional Safety Quality-Managed
WQFN (RTA) 40 36 mm² (6 mm × 6 mm)
  • 9 to 100-V, Triple half-bridge gate driver
    • Optional triple low-side current shunt amplifiers
  • Functional Safety Quality-Managed
    • Documentation available to aid IEC 61800-5-2 functional safety system design
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)
  • 9 to 100-V, Triple half-bridge gate driver
    • Optional triple low-side current shunt amplifiers
  • Functional Safety Quality-Managed
    • Documentation available to aid IEC 61800-5-2 functional safety system design
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)

The DRV835xF family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes.

The DRV835xF uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.

The DRV835xF family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes.

The DRV835xF uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.
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DRV8350F 現行 102V 最大 3 相位功能安全品質管理智慧型閘極驅動器 No current sense amplifiers

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 DRV835xF 100-V Three-Phase Smart Gate Driver datasheet (Rev. B) PDF | HTML 2021/8/27
Application brief 人形機器人的馬達控制 PDF | HTML PDF | HTML 2026/6/5
應用說明 Relating Payload to Brushless DC Motor Driver Specifications PDF | HTML 2024/12/2
技術文章 How motor drive innovations are helping solve robotic movement design challenges PDF | HTML 2024/1/5
應用說明 System Design Considerations for High-Power Motor Driver Applications PDF | HTML 2021/6/22
功能安全資訊 Design Smaller Safe Torque Off (STO) Systems Using 3-Phase Smart Gate Drivers PDF | HTML 2021/3/4
類比設計期刊 Implementing STO functionality w/ diagnostic and monitoring for ind. motor drive 2019/9/30

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

DRV8353RH-EVM — DRV8353RH 評估模組、三相無刷 DC 智慧型閘極驅動器

DRV8353RH-EVM 是基於 DRV8353RH 閘極驅動器和 CSD19532Q5B NexFET™ MOSFET 的 15A、3 相位無刷 DC 驅動級。

此模組具備獨立 DC 匯流排和相位電壓感測，以及獨立低壓側電流分流放大器，因此此評估模組最適合用於無感測器 BLDC 演算法。  模組透過整合式 0.35A 降壓穩壓器供應 MCU 3.3V 電源。  此驅動平台具備 IDRIVE 配置、故障接腳，並可透過由特定電阻值構成的簡易可配置硬體介面進行短路、過熱、擊穿和欠電壓保護。

使用指南: PDF
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開發板

DRV8353RS-EVM — DRV8353RS 評估模組、三相無刷 DC 智慧型閘極驅動器 

DRV8353RS-EVM 是基於 DRV8353RS 閘極驅動器和 CSD19532Q5B NexFET™ MOSFET 的 15A、三相無刷直流驅動級。

此模組具備獨立 DC 匯流排和相位電壓感測，以及獨立低壓側電流分流放大器，因此此評估模組最適合用於無感測器 BLDC 演算法。  模組透過整合式 0.35A 降壓穩壓器供應 MCU 3.3V 電源。  驅動平台具備 IDRIVE 配置，故障接腳，並可透過可配置的 SPI 保護短路，過熱，直通與欠電壓情況。

使用指南: PDF
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快速入門

MSP-MOTOR-CONTROL — MSPM0 Firmware solutions for motor control applications

MSP 馬達控制為一系列軟體、工具和範例，可在 30 分鐘或更短時間內運用 MSPM0 Arm® Cortex® M0+ MCU 和熱門馬達驅動器解決方案來運轉馬達。

MSP 馬達控制提供可轉動有刷、步進與三相馬達的受支援硬體套件範例，具備最佳性能、整合性與易用性的感測和無感測器控制演算法。透過訂購硬體、連接馬達及使用我們的圖形使用者介面或線上程式碼範例，可隨時運轉您的馬達。

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計算工具

BLDC-MAX-QG-MOSFET-CALCULATOR — Calculate the maximum QG MOSFET for your motor driver

Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
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