DRV8350F
- 9 to 100-V, Triple half-bridge gate driver
- Optional triple low-side current shunt amplifiers
- Functional Safety Quality-Managed
- Documentation available to aid IEC 61800-5-2 functional safety system design
- Smart gate drive architecture
- Adjustable slew rate control for EMI performance
- VGS handshake and minimum dead-time insertion to prevent shoot-through
- 50-mA to 1-A peak source current
- 100-mA to 2-A peak sink current
- dV/dt mitigation through strong pulldown
- Integrated gate driver power supplies
- High-side doubler charge pump For 100% PWM duty cycle control
- Low-side linear regulator
- Integrated triple current shunt amplifiers
- Adjustable gain (5, 10, 20, 40 V/V)
- Bidirectional or unidirectional support
- 6x, 3x, 1x, and independent PWM modes
- Supports 120° sensored operation
- SPI or hardware interface available
- Low-power sleep mode (20 µA at VVM = 48-V)
- Integrated protection features
- VM undervoltage lockout (UVLO)
- Gate drive supply undervoltage (GDUV)
- MOSFET VDS overcurrent protection (OCP)
- MOSFET shoot-through prevention
- Gate driver fault (GDF)
- Thermal warning and shutdown (OTW/OTSD)
- Fault condition indicator (nFAULT)
The DRV835xF family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes.
The DRV835xF uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events
Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.

更多資訊
提供安全說明文件和其他資訊。立即索取
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | DRV835xF 100-V Three-Phase Smart Gate Driver datasheet (Rev. B) | PDF | HTML | 2021年 8月 27日 |
Application brief | 人形機器人的馬達控制 | PDF | HTML | 2025年 2月 5日 | |
Application note | Relating Payload to Brushless DC Motor Driver Specifications | PDF | HTML | 2024年 12月 2日 | |
Application note | System Design Considerations for High-Power Motor Driver Applications | PDF | HTML | 2021年 6月 22日 | |
Functional safety information | Design Smaller Safe Torque Off (STO) Systems Using 3-Phase Smart Gate Drivers | PDF | HTML | 2021年 3月 4日 | |
Analog Design Journal | Implementing STO functionality w/ diagnostic and monitoring for ind. motor drive | 2019年 9月 30日 |
設計與開發
如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。
DRV8350H-EVM — DRV8350H 三相智慧型閘極驅動器評估模組
DRV8350H-EVM 是以 DRV8350H 閘極驅動器和 CSD19532Q5B NexFET™ 電源塊為基礎的 15A、3 相無刷 DC 驅動級。
此模組具備獨立的 DC 匯流排和相位電壓感測,以及外部獨立低壓側電流分流放大器,使此評估模組成為無感測器 BLDC 演算法的最佳選擇。 此模組可透過 12V、0.35A 降壓式(降壓)穩壓器供電給 MCU 3.3V 及 5V 電源塊。 此驅動器可配置為分裂軌和單軌電源解決方案。此驅動平台具備 IDRIVE 配置、故障接腳,並可透過可配置硬體進行短路、過熱、擊穿和欠電壓保護。此 EVM 具備完整的 USB 轉 MCU (...)
DRV8350S-EVM — DRV8350S 三相智慧型閘極驅動器評估模組
DRV8350S-EVM 是一款 15A、三相無刷 DC 馬達驅動級,採用 DRV8350S 閘極驅動器與 CSD19532Q5B NexFET™ 電源塊。
此模組具備單獨立的 DC 匯流排和相位電壓感測,以及外部獨立低側電流分流放大器,使此評估模組成為無感測器 BLDC 演算法的最佳選擇。 此模組透過 12V、0.35A 降壓穩壓器供電給 MCU 3.3V 及 5V 電源塊。 此驅動器可配置為分軌和單軌電源解決方案。驅動平台具備 IDRIVE 配置,故障接腳,並可透過可配置的 SPI 保護短路,過熱,直通與欠電壓情況。EVM 具備完整 USB 轉 MCU 環境,能以可用的梯形驅動器韌體和 (...)
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
WQFN (RTV) | 32 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點