DRV8770
- 100-V H-bridge gate driver
- Drives N-channel MOSFETs (NMOS)
- Gate driver supply (GVDD): 5-20 V
- MOSFET supply (SHx) support up to 100 V
- Integrated bootstrap diodes
- Supports inverting and non-inverting INLx inputs (QFN package)
- Bootstrap gate drive architecture
- 750-mA source current
- 1.5-A Sink current
- Supports up to 15s battery powered applications
- Low leakage current on SHx pins (<55 µA)
- Absolute maximum BSTx voltage upto 115-V
- Supports negative transients down to -22 V on SHx pins
-
Adjustable deadtime through DT pin in QFN package
- Fixed Deadtime insertion of 200 ns in TSSOP package
- Supports 3.3-V, and 5-V logic inputs with 20-V abs max
- 4-ns typical propogation delay matching
- Compact QFN and TSSOP packages and footprints
- Efficient system design with Power Blocks
- Integrated protection features
- BST undervoltage lockout (BSTUV)
- GVDD undervoltage (GVDDUV)
The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.
The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx pins. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | DRV8770: 100-V Brushed DC Gate Driver datasheet | PDF | HTML | 2021年 6月 29日 |
| User guide | DRV8770 100-V Gate Driver Evaluation Module | PDF | HTML | 2021年 9月 29日 | |
| Certificate | DRV8770EVM EU RoHS Declaration of Conformity (DoC) | 2021年 8月 16日 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
DRV8770EVM — DRV8770-100-V 閘極驅動器評估模組
DRV8770 評估模組 (EVM) 可用於輕鬆評估 DRV8770 裝置。
DRV8770 裝置提供兩個半橋式閘極驅動器，每個驅動器都能驅動高壓側和低壓側 N 通道功率 MOSFET。DRV8770 配備 BST 欠壓鎖定、GVDD 欠壓和過熱自動關機等防護功能。
EVM 配備板載降壓轉換器和 LDO，可為電路板上所有元件以及全橋高壓側電源供應器提供電源。EVM 配備了電位計，用於設定輸入控制針腳的工作週期 (INHA、INLA、INHB、INLB)。可修改 EVM 以支援外部微控制器來控制 DRV8770 馬達驅動器。
| 封裝 | 引腳 | 下載 |
|---|---|---|
| VQFN (RGE) | 24 | 檢視選項 |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 資格摘要
- 進行中可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。