EMB1412
- Compound CMOS and Bipolar Outputs Reduce
Output Current Variation - 7 A Sink/3 A Source Current
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns/12 ns Rise
Fall with 2 nF Load) - Inverting and Non-Inverting Inputs Provide
Either Configuration with a Single Device - Supply Rail Under-Voltage Lockout Protection
- Dedicated Input Ground (IN_REF) for Split
Supply or Single Supply Operation - Thermally Enhanced 8-Pin VSSOP Package
- Output Swings from VCC to VEE Which can
be Negative Relative to Input Ground
The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | EMB1412 MOSFET Gate Driver datasheet (Rev. B) | PDF | HTML | 2014/11/20 | ||
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020/2/28 | ||||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020/2/28 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
UCC27423-4-5-Q1EVM — 具有啟用功能的 UCC2742xQ1 雙路 4A 高速低壓側 MOSFET 驅動器評估模組
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| HVSSOP (DGN) | 8 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。