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SN74ABT541B-EP

現行

具 TTL 相容 CMOS 輸入和 3 態輸出的強化型產品 8 通道、4.5-V 至 5.5-V 緩衝器

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產品規格表

SN74ABT541B-EP

現行
產品規格表 立即訂購

產品詳細資料

Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 64 Supply current (max) (µA) 30000 IOH (max) (mA) -32 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 85
Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 64 Supply current (max) (µA) 30000 IOH (max) (mA) -32 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 85
TSSOP (PW) 20 41.6 mm² 6.5 x 6.4
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
EPIC-IIB is a trademark of Texas Instruments.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
EPIC-IIB is a trademark of Texas Instruments.

The SN74ABT541B octal buffer and line driver is ideal for driving bus lines or buffering memory address registers. The device features inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1\ or OE2)\ input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74ABT541B octal buffer and line driver is ideal for driving bus lines or buffering memory address registers. The device features inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1\ or OE2)\ input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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類型 標題 日期
* Data sheet SN74ABT541B-EP datasheet 2004年 1月 6日
* VID SN74ABT541B-EP VID V6204700 2016年 6月 21日
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
Selection guide Logic Guide (Rev. AB) 2017年 6月 12日
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
User guide LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
Application note Selecting the Right Level Translation Solution (Rev. A) 2004年 6月 22日
Application note Quad Flatpack No-Lead Logic Packages (Rev. D) 2004年 2月 16日
Application note TI IBIS File Creation, Validation, and Distribution Processes 2002年 8月 29日
Application note Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 2002年 5月 10日
Selection guide Advanced Bus Interface Logic Selection Guide 2001年 1月 9日
Application note Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 1997年 8月 1日
Application note Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 1997年 6月 1日
Application note Designing With Logic (Rev. C) 1997年 6月 1日
Application note Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 1997年 3月 1日
Application note Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 1996年 12月 1日
Application note Input and Output Characteristics of Digital Integrated Circuits 1996年 10月 1日
Application note Live Insertion 1996年 10月 1日
Application note Understanding Advanced Bus-Interface Products Design Guide 1996年 5月 1日

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