產品詳細資料

Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Configuration 1:1 SPST Number of channels 4 Bandwidth (MHz) 500 Ron (typ) (mΩ) 4000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 2000 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 4 CON (typ) (pF) 8 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 9000 Turnoff time (disable) (max) (ns) 5.3 Turnon time (enable) (max) (ns) 6.6 VIH (min) (V) 1.7 VIL (max) (V) 0.8 Rating Catalog
Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Configuration 1:1 SPST Number of channels 4 Bandwidth (MHz) 500 Ron (typ) (mΩ) 4000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 2000 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 4 CON (typ) (pF) 8 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 9000 Turnoff time (disable) (max) (ns) 5.3 Turnon time (enable) (max) (ns) 6.6 VIH (min) (V) 1.7 VIL (max) (V) 0.8 Rating Catalog
SSOP (DBQ) 16 29.4 mm² (4.9 mm × 6 mm) TVSOP (DGV) 14 23.04 mm² (3.6 mm × 6.4 mm) TSSOP (PW) 14 32 mm² (5 mm × 6.4 mm) VQFN (RGY) 14 12.25 mm² (3.5 mm × 3.5 mm)
  • High-bandwidth data path (up to 500MHz)
  • 5V tolerant I/Os with device powered up or powered down
  • Low and flat ON-state resistance (ron) characteristics over operating range (ron = 3Ω typical)
  • Rail-to-rail switching on data I/O ports
    • 0V to 5V switching with 3.3V VCC
    • 0V to 3.3V switching with 2.5V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input and output capacitance minimizes loading and signal distortion (Cio(OFF) = 4pF typical)
  • Fast switching frequency (fOE = 20MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.3mA typical)
  • VCC operating range from 2.3V to 3.6V
  • Data I/Os support 0V to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V)
  • Control inputs can be driven by TTL, 5V, or 3.3V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100mA per JESD 78, Class II
  • ESD performance tested per JESD 22
    • 2000V Human-Body Model (A114-B, Class II)
    • 1000V Charged-Device Model (C101)
  • Supports both digital and analog applications: USB interface, differential signal interface, bus isolation, low-distortion signal gating.
  • For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application note CBT-C, CB3T, and CB3Q Signal-Switch Families.
  • High-bandwidth data path (up to 500MHz)
  • 5V tolerant I/Os with device powered up or powered down
  • Low and flat ON-state resistance (ron) characteristics over operating range (ron = 3Ω typical)
  • Rail-to-rail switching on data I/O ports
    • 0V to 5V switching with 3.3V VCC
    • 0V to 3.3V switching with 2.5V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input and output capacitance minimizes loading and signal distortion (Cio(OFF) = 4pF typical)
  • Fast switching frequency (fOE = 20MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.3mA typical)
  • VCC operating range from 2.3V to 3.6V
  • Data I/Os support 0V to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V)
  • Control inputs can be driven by TTL, 5V, or 3.3V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100mA per JESD 78, Class II
  • ESD performance tested per JESD 22
    • 2000V Human-Body Model (A114-B, Class II)
    • 1000V Charged-Device Model (C101)
  • Supports both digital and analog applications: USB interface, differential signal interface, bus isolation, low-distortion signal gating.
  • For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application note CBT-C, CB3T, and CB3Q Signal-Switch Families.

The SN74CB3Q3125 device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

The SN74CB3Q3125 device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

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* 資料表 SN74CB3Q3125 Quadruple FET Bus Switch 2.5V/3.3V Low-Voltage, High-Bandwidth Bus Switch datasheet (Rev. D) PDF | HTML 2026/1/16
應用說明 Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022/6/2
應用說明 Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021/12/1
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 2021/1/6
技術文章 Logic gates and switches with Ioff or powered-off protection: empowering you to po PDF | HTML 2016/11/2

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HSPICE MODEL OF SN74CB3Q3125

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模擬型號

SN74CB3Q3125 IBIS Model (Rev. A)

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參考設計

TIDA-00180 — 具有可編程輸出電壓和位置編碼器介面保護的電源

此參考設計實作具備可編程輸出電壓和創新智慧 eFuse 技術的通用電源供應器,可用於工業驅動器的多標準位置編碼器介面模組。eFuse 提供突波電流和過電流保護,以及使用者可編程的過電壓與欠電壓保護,且能在工業溫度範圍內保持準確的限制值。此設計符合 IEC61800-3 標準,滿足 ESD、快速暫態突波和突波的 EMC 抗擾度要求。

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SSOP (DBQ) 16 Ultra Librarian
TVSOP (DGV) 14 Ultra Librarian
TSSOP (PW) 14 Ultra Librarian
VQFN (RGY) 14 Ultra Librarian

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