Packaging information
| Package | Pins SOT-SC70 (DCK) | 5 |
| Operating temperature range (°C) -40 to 85 |
| Package qty | Carrier 3,000 | LARGE T&R |
Features for the SN74CB3T1G125
- Output Voltage Translation Tracks VCC
- Supports Mixed-Mode Signal Operation on All Data I/O Ports
- 5-V Input Down to 3.3-V Output Level Shift With 3.3-V VCC
- 5-V/3.3-V Input Down to 2.5-V Output Level Shift With 2.5-V VCC
- 5-V-Tolerant I/Os, With Device Powered Up or Powered Down
- Bidirectional Data Flow With Near-Zero Propagation Delay
- Low ON-State Resistance (ron) Characteristics (ron = 5
Typ) - Low Input/Output Capacitance Minimizes Loading (Cio(OFF) = 5 pF Typ)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 20 µA Max)
- VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
- Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 250 mA Per JESD 17
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Digital Applications: Level Translation, USB Interface, Bus Isolation
- Ideal for Low-Power Portable Equipment
Description for the SN74CB3T1G125
The SN74CB3T1G125 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T1G125 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels.
The SN74CB3T1G125 is a 1-bit bus switch with a single ouput-enable (OE) input. When OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.