Product details

VDS (Max) (V) 650 RDS (on) (Milliohm) 170 ID (Max) (A) 5.4 Rating Catalog
VDS (Max) (V) 650 RDS (on) (Milliohm) 170 ID (Max) (A) 5.4 Rating Catalog
  • 650-V GaN power-FET half bridge
  • 170-mΩ low-side and 248-mΩ high-side GaN FETs
  • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high-bandwidth and high accuracy
  • Low-side / high-side gate-drive interlock
  • High-side gate-drive signal level shifter
  • Smart-switched bootstrap diode function
  • High-side start up : < 8 us
  • Low-side / high-side cycle-by-cycle over-current protection
  • Over-temperature protection with FLT pin reporting
  • AUX idle quiescent current: 240 µA
  • AUX standby quiescent current: 50 µA
  • BST idle quiescent current: 60 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 9x7 mm QFN package with dual thermal pads
  • 650-V GaN power-FET half bridge
  • 170-mΩ low-side and 248-mΩ high-side GaN FETs
  • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high-bandwidth and high accuracy
  • Low-side / high-side gate-drive interlock
  • High-side gate-drive signal level shifter
  • Smart-switched bootstrap diode function
  • High-side start up : < 8 us
  • Low-side / high-side cycle-by-cycle over-current protection
  • Over-temperature protection with FLT pin reporting
  • AUX idle quiescent current: 240 µA
  • AUX standby quiescent current: 50 µA
  • BST idle quiescent current: 60 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 9x7 mm QFN package with dual thermal pads

The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications. The LMG2610 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9-mm by 7-mm QFN package.

The asymmetric GaN FET resistances are optimized for ACF operating conditions. Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The high-side gate-drive signal level shifter eliminates noise and burst-mode power dissipation problems found with external solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2610 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down.

The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications. The LMG2610 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9-mm by 7-mm QFN package.

The asymmetric GaN FET resistances are optimized for ACF operating conditions. Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The high-side gate-drive signal level shifter eliminates noise and burst-mode power dissipation problems found with external solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2610 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down.

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Technical documentation

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* Data sheet LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters datasheet (Rev. A) PDF | HTML 16 Nov 2022
EVM User's guide Using the UCC28782EVM-030 (Rev. C) PDF | HTML 28 Jul 2022

Design & development

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Evaluation board

UCC28782EVM-030 — UCC28782 active clamp flyback converter 65-W USB-C PD EVM with LMG2610 integrated GaN half-bridge

UCC28782EVM-030 demonstrates high-efficiency and high-density for a 65-W USB Type-C™ power delivery (PD) off-line adapter using the UCC28782 active-clamp flyback controller.  The input supports a universal 90 Vac to 264 Vac and the single output can be set to 5 V, 9 V and 15 V all at 3-A (...)

User guide: PDF | HTML
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Simulation model

LMG2610 SIMPLIS Model

SNOM766.ZIP (304 KB) - SIMPLIS Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

PMP22244 — 60-W USB Type-C® high-density active clamp flyback with GaN reference design

This reference design is a high-density, 60-W 115-VAC input power supply for USB Type-C applications that uses the UCC28782 active clamp flyback controller, LMG2610 integrated GaN half-bridge and UCC24612 synchronous rectifier driver. The maximum power rating is 60 W at 20-V or 15-V output, 54 W at (...)
Test report: PDF
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