JAJU732C June 2019 – July 2022
Figure 3-1 shows the power stage of a single-phase, dual-active bridge. The primary side consists of 1200-V, 16-mΩ silicon carbide FETs C3M0016120K( C3M0075120K can be an alternative part) to block a DC voltage of 800 V, and the secondary side consists of 900-V, 30-mΩ silicon carbide FETs C3M0030090K to block DC voltage of 500 V. The full bridges are connected with a high frequency switching transformer (T1). The components marked with DNP are not populated on the board. These are output capacitances for the MOSFETs, and they can be used optionally to reduce the turn off switching losses.