JAJU732C June   2019  – July 2022

 

  1.   概要
  2.   Resources
  3.   特長
  4.   アプリケーション
  5.   5
  6. 1System Description
    1. 1.1 Key System Specifications
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1  UCC21530
      2. 2.2.2  AMC1311
      3. 2.2.3  AMC3302
      4. 2.2.4  AMC3306M05
      5. 2.2.5  LM76003
      6. 2.2.6  LMZ31707
      7. 2.2.7  OPA320
      8. 2.2.8  ISO7721
      9. 2.2.9  SN6501
      10. 2.2.10 SN6505B
      11. 2.2.11 TMP235
      12. 2.2.12 LMT87
      13. 2.2.13 TL431
      14. 2.2.14 LMV762
      15. 2.2.15 TMS320F280049 C2000 MCU
      16. 2.2.16 TMDSCNCD280049C
    3. 2.3 System Design Theory
      1. 2.3.1 Dual Active Bridge Analogy With Power Systems
      2. 2.3.2 Dual-Active Bridge - Switching Sequence
      3. 2.3.3 Dual-Active Bridge - Zero Voltage Switching (ZVS)
      4. 2.3.4 Dual-Active Bridge - Design Considerations
        1. 2.3.4.1 Leakage Inductor
        2. 2.3.4.2 Effect of Inductance on Current
        3. 2.3.4.3 Phase Shift
        4. 2.3.4.4 Capacitor Selection
        5. 2.3.4.5 Soft Switching Range
        6. 2.3.4.6 Switching Frequency
        7. 2.3.4.7 Transformer Selection
        8. 2.3.4.8 SiC MOSFET Selection
      5. 2.3.5 Loss Analysis
        1. 2.3.5.1 Design Equations
        2. 2.3.5.2 SiC MOSFET and Diode Losses
        3. 2.3.5.3 Transformer Losses
        4. 2.3.5.4 Inductor Losses
        5. 2.3.5.5 Gate Driver Losses
        6. 2.3.5.6 Efficiency
        7. 2.3.5.7 Thermal Considerations
  8. 3Circuit Description
    1. 3.1 Power Stage
    2. 3.2 DC Voltage Sensing
      1. 3.2.1 Primary DC Voltage Sensing
      2. 3.2.2 Secondary DC Voltage Sensing
    3. 3.3 Current Sensing
    4. 3.4 Power Architecture
      1. 3.4.1 Auxiliary Power Supply
      2. 3.4.2 Isolated Power Supply for Sense Circuits
    5. 3.5 Gate Driver
      1. 3.5.1 Gate Driver Circuit
      2. 3.5.2 Gate Driver Bias Power Supply
      3. 3.5.3 Gate Driver Discrete Circuits - Short-Circuit Detection and Two Level Turn Off
  9. 4Hardware, Software, Testing Requirements, and Test Results
    1. 4.1 Required Hardware and Software
      1. 4.1.1 Hardware
      2. 4.1.2 Software
        1. 4.1.2.1 Getting Started With Software
        2. 4.1.2.2 Pin Configuration
        3. 4.1.2.3 PWM Configuration
        4. 4.1.2.4 High-Resolution Phase Shift Configuration
        5. 4.1.2.5 ADC Configuration
        6. 4.1.2.6 ISR Structure
    2. 4.2 Test Setup
    3. 4.3 PowerSUITE GUI
    4. 4.4 LABs
      1. 4.4.1 Lab 1
      2. 4.4.2 Lab 2
      3. 4.4.3 Lab 3
      4. 4.4.4 Lab 4
      5. 4.4.5 Lab 5
    5. 4.5 Test Results
      1. 4.5.1 Open-Loop Performance
      2. 4.5.2 Closed-Loop Performance
  10. 5Design Files
    1. 5.1 Schematics
    2. 5.2 Bill of Materials
    3. 5.3 PCB Layout Recommendations
      1. 5.3.1 Layout Prints
    4. 5.4 Altium Project
    5. 5.5 Gerber Files
    6. 5.6 Assembly Drawings
  11. 6Related Documentation
    1. 6.1 Trademarks
  12. 7Terminology
  13. 8About the Author
  14. 9Revision History

2.2.1 UCC21530

The UCC21530 is used for driving the SiC MOSFETs of the power stage. The device is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. The UCC21530 is designed to drive IGBTs and SiC MOSFETs up to 5 MHz with best-in-class propagation delay of 19 ns and pulse-width distortion of 5 ns. The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V. The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers.

For more details on this device, see the UCC21530 product page.