SLVSI22 August 2025 DRV8844A
PRODUCTION DATA
Because the output stages use N-channel FETs, a gate drive voltage higher than the VM power supply is needed to fully enhance the high-side FETs. The DRV8844A integrates a charge pump circuit that generates a voltage above the VM supply for this purpose.
The charge pump requires two external capacitors for operation. Refer to the block diagram and pin descriptions for details on these capacitors (value, connection, and so forth).
The charge pump is shut down when nSLEEP is low.
Figure 6-3 Charge Pump