SNVSCT1 October 2025 LM5066H
ADVANCE INFORMATION
Refer to the PDF data sheet for device specific package drawings
The LM5066Hx includes MOSFET fault detection capability to identify damaged external MOSFETs under specific conditions. The device monitors for two main fault types:
Drain-to-source or drain-to-gate faults are detected when,
During insertion, the voltage across the sense resistor exceeds 2mV (VSNS > 2mV) or the voltage across the FET falls below 2V (VDS < 2V)
After startup, if GATE turns off due to any fault and the sense resistor voltage remains above 2 mV after 1ms
Gate-to-source or drain-to-gate faults are detected when,
VGS1 remains below 4V for more than 500ms after GATE1 is set high
VGS2 remains below 4V for more than 500ms after GATE2 is set high
When a drain fault is detected, multiple status registers are updated, the FET FAIL bit in STATUS_WORD (79h), the EXT_MOSFET_SHORTED bit in STATUS_MFR_SPECIFIC (80h) and DIAGNOSTIC_WORD (E1h), and the FET_FAULT_DRAIN bit in STATUS_MFR_SPECIFIC. The SMBA pin asserts unless disabled via the ALERT_MASK register (D8h).
For gate faults, the device sets the FET FAIL bit in STATUS_WORD (79h), the EXT_MOSFET_SHORTED bit in STATUS_MFR_SPECIFIC (80h) and DIAGNOSTIC_WORD (E1h). Additionally, for GATE1 faults, the FET_FAULT_GATE1 bit in STATUS_MFR_SPECIFIC is set, while for GATE2 faults, the FET_FAULT_GATE2 bit is set. After detecting GATE type fault, GATE1 and GATE2 can be configured to turn off by setting bit 6 in the GATE_MASK (D7h) register.