SNAS918 May   2025 LMK5C23208A

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Diagrams
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Differential Voltage Measurement Terminology
    2. 7.2 Output Clock Test Configurations
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
      1. 8.2.1 PLL Architecture Overview
      2. 8.2.2 DPLL
        1. 8.2.2.1 Independent DPLL Operation
        2. 8.2.2.2 Cascaded DPLL Operation
        3. 8.2.2.3 APLL Cascaded With DPLL
      3. 8.2.3 APLL-Only Mode
    3. 8.3 Feature Description
      1. 8.3.1  Oscillator Input (XO)
      2. 8.3.2  Reference Inputs
      3. 8.3.3  Clock Input Interfacing and Termination
      4. 8.3.4  Reference Input Mux Selection
        1. 8.3.4.1 Automatic Input Selection
        2. 8.3.4.2 Manual Input Selection
      5. 8.3.5  Hitless Switching
        1. 8.3.5.1 Hitless Switching With Phase Cancellation
        2. 8.3.5.2 Hitless Switching With Phase Slew Control
        3. 8.3.5.3 Hitless Switching With 1PPS Inputs
      6. 8.3.6  Gapped Clock Support on Reference Inputs
      7. 8.3.7  Input Clock and PLL Monitoring, Status, and Interrupts
        1. 8.3.7.1 XO Input Monitoring
        2. 8.3.7.2 Reference Input Monitoring
          1. 8.3.7.2.1 Reference Validation Timer
          2. 8.3.7.2.2 Frequency Monitoring
          3. 8.3.7.2.3 Missing Pulse Monitor (Late Detect)
          4. 8.3.7.2.4 Runt Pulse Monitor (Early Detect)
          5. 8.3.7.2.5 Phase Valid Monitor for 1PPS Inputs
        3. 8.3.7.3 PLL Lock Detectors
        4. 8.3.7.4 Tuning Word History
        5. 8.3.7.5 Status Outputs
        6. 8.3.7.6 Interrupt
      8. 8.3.8  PLL Relationships
        1. 8.3.8.1  PLL Frequency Relationships
          1. 8.3.8.1.1 APLL Phase Frequency Detector (PFD) and Charge Pump
          2. 8.3.8.1.2 APLL VCO Frequency
          3. 8.3.8.1.3 DPLL TDC Frequency
          4. 8.3.8.1.4 DPLL VCO Frequency
          5. 8.3.8.1.5 Clock Output Frequency
        2. 8.3.8.2  Analog PLLs (APLL1, APLL2)
        3. 8.3.8.3  APLL Reference Paths
          1. 8.3.8.3.1 APLL XO Doubler
          2. 8.3.8.3.2 APLL XO Reference (R) Divider
        4. 8.3.8.4  APLL Feedback Divider Paths
          1. 8.3.8.4.1 APLL N Divider With Sigma-Delta Modulator (SDM)
        5. 8.3.8.5  APLL Loop Filters (LF1, LF2)
        6. 8.3.8.6  APLL Voltage-Controlled Oscillators (VCO1, VCO2)
          1. 8.3.8.6.1 VCO Calibration
        7. 8.3.8.7  APLL VCO Clock Distribution Paths
        8. 8.3.8.8  DPLL Reference (R) Divider Paths
        9. 8.3.8.9  DPLL Time-to-Digital Converter (TDC)
        10. 8.3.8.10 DPLL Loop Filter (DLF)
        11. 8.3.8.11 DPLL Feedback (FB) Divider Path
      9. 8.3.9  Output Clock Distribution
      10. 8.3.10 Output Source Muxes
      11. 8.3.11 Output Channel Muxes
      12. 8.3.12 Output Dividers (OD)
      13. 8.3.13 SYSREF/1PPS Output
      14. 8.3.14 Output Delay
      15. 8.3.15 Clock Output Drivers
        1. 8.3.15.1 Differential Output
        2. 8.3.15.2 LVCMOS Output
      16. 8.3.16 Clock Output Interfacing and Termination
      17. 8.3.17 Glitchless Output Clock Start-Up
      18. 8.3.18 Output Auto-Mute During LOL
      19. 8.3.19 Output Synchronization (SYNC)
      20. 8.3.20 Zero-Delay Mode (ZDM)
      21. 8.3.21 DPLL Programmable Phase Delay
      22. 8.3.22 Time Elapsed Counter (TEC)
        1. 8.3.22.1 Configuring TEC Functionality
        2. 8.3.22.2 SPI as a Trigger Source
        3. 8.3.22.3 GPIO Pin as a TEC Trigger Source
          1. 8.3.22.3.1 An Example: Making a Time Elapsed Measurement Using TEC and GPIO1 as Trigger
        4. 8.3.22.4 TEC Timing
        5. 8.3.22.5 Other TEC Behavior
    4. 8.4 Device Functional Modes
      1. 8.4.1 DPLL Operating States
        1. 8.4.1.1 Free-Run
        2. 8.4.1.2 Lock Acquisition
        3. 8.4.1.3 DPLL Locked
        4. 8.4.1.4 Holdover
      2. 8.4.2 Digitally-Controlled Oscillator (DCO) Frequency and Phase Adjustment
        1. 8.4.2.1 DPLL DCO Control
        2. 8.4.2.2 DPLL DCO Relative Adjustment Frequency Step Size
        3. 8.4.2.3 APLL DCO Frequency Step Size
      3. 8.4.3 APLL Frequency Control
      4. 8.4.4 Device Start-Up
        1. 8.4.4.1 Device Power-On Reset (POR)
        2. 8.4.4.2 PLL Start-Up Sequence
        3. 8.4.4.3 Start-Up Options for Register Configuration
        4. 8.4.4.4 GPIO1 and SCS_ADD Functionalities
        5. 8.4.4.5 ROM Page Selection
        6. 8.4.4.6 ROM Detailed Description
        7. 8.4.4.7 EEPROM Overlay
    5. 8.5 Programming
      1. 8.5.1 Memory Overview
      2. 8.5.2 Interface and Control
        1. 8.5.2.1 Programming Through TICS Pro
        2. 8.5.2.2 SPI Serial Interface
        3. 8.5.2.3 I2C Serial Interface
      3. 8.5.3 General Register Programming Sequence
      4. 8.5.4 Steps to Program the EEPROM
        1. 8.5.4.1 Overview of the SRAM Programming Methods
        2. 8.5.4.2 EEPROM Programming With the Register Commit Method
        3. 8.5.4.3 EEPROM Programming With the Direct Writes Method or Mixed Method
        4. 8.5.4.4 Five MSBs of the I2C Address and the EEPROM Revision Number
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Device Start-Up Sequence
      2. 9.1.2 Power Down (PD#) Pin
      3. 9.1.3 Strap Pins for Start-Up
      4. 9.1.4 Pin States
      5. 9.1.5 ROM and EEPROM
      6. 9.1.6 Power Rail Sequencing, Power Supply Ramp Rate, and Mixing Supply Domains
        1. 9.1.6.1 Power-On Reset (POR) Circuit
        2. 9.1.6.2 Power Up From a Single-Supply Rail
        3. 9.1.6.3 Power Up From Split-Supply Rails
        4. 9.1.6.4 Non-Monotonic or Slow Power-Up Supply Ramp
      7. 9.1.7 Slow or Delayed XO Start-Up
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Best Design Practices
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Power Supply Bypassing
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
      3. 9.5.3 Thermal Reliability
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
        1. 10.1.1.1 Clock Tree Architect Programming Software
        2. 10.1.1.2 Texas Instruments Clocks and Synthesizers (TICS) Pro Software
        3. 10.1.1.3 PLLatinum™ Simulation Tool
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Mechanical Data
    2.     PACKAGING INFORMATION
    3. 12.2 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.5.4.3 EEPROM Programming With the Direct Writes Method or Mixed Method

  1. Attain the SRAM mapping of your desired configuration. The SRAM map is generated in TICS Pro. For the TARGET_ADR_MSB and EEREV mapping, see Five MSBs of the I2C Address and the EEPROM Revision Number.
  2. Mixed method only: Commit active registers to SRAM by setting REGCOMMIT (R171[6]) to 1.
    1. Note: REGCOMMIT is auto-cleared to 0 when the transfer is completed.
  3. Enable EEPROM overlay by setting R20[7] (ROM_PLUS_EE) to 1.
  4. Configure the SRAM address pointer by setting R173[4:0] (MEMADR_12:8) to the 5 MSBs of the SRAM address.
  5. Configure the SRAM address pointer by R174 (MEMADR) to the 8 LSBs of the SRAM address.
  6. Store the desired data at the specified SRAM address by setting R176 (RAMDAT) to the SRAM data from the SRAM map.
  7. Repeat steps 4-6 for all desired SRAM addresses.
  8. Unlock EEPROM by setting to R180 (NVMUNLK) to 234.
  9. In one transaction:
    1. Erase the contents of the EEPROM by setting NVMERASE (R171[1]) to 1.
    2. Initiate EEPROM programming to transfer the SRAM contents to EEPROM by setting NVMPROG (R171[0]) to 1.
    3. Note: Step 5 & 6 must be atomic (back-to-back) writes without any other register transactions in-between. Serial communication interruptions (such as access to other devices on the same bus) is also not allowed for successful EEPROM programming.
  10. Wait for EEPROM programming to finish by polling R171[2] (NVMBUSY) until cleared or wait about 500ms.
    1. Note: Do not power down, PD# toggle, or continue to the next step until NVMBUSY is cleared to have a successful EEPROM programming.
  11. Lock the EEPROM by setting NVMUNLK to 0.
  12. At the next POR, if the EEPROM programming is successful, the EEPROM program count, R16 (NVMCNT), increments by 1. Also, if the EEPROM overlay bit is set, the active registers are loaded from EEPROM.

Hex instruction example for changing the TARGET_ADR_MSB:


R171        0x00AB40           # Set REGCOMMIT (Mixed Method only)   
R20         0x001480           # Enable EEPROM OVERLAY
R173        0x00AD00           # Set 5 MSBs of SRAM address
R174        0x00AE0C           # Set 8 LSBs of SRAM address
R176        0x00B019           # Set 5 MSBs of desired I2C address

R180        0x00B4EA           # UNLOCK EEPROM
R171        0x00AB03           # ERASE and PROGRAM SRAM contents to EEPROM
while(READ_REG(NVMBUSY) != 0)  # NVMBUSY is located in 0xAB, bit 2
R180        0x00B400           # Lock EEPROM

Hex instruction example for changing the EEREV: