SLASEU5A October 2019 – February 2021 MSP430F5438A-ET
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
DVCC(PGM/ERASE) | Program and erase supply voltage | 1.8 | 3.6 | V | ||
IPGM | Average supply current from DVCC during program | 3 | 7 | mA | ||
IERASE | Average supply current from DVCC during erase | 7 | mA | |||
IMERASE, IBANK | Average supply current from DVCC during mass erase or bank erase | 7 | mA | |||
tCPT | Cumulative program time | See (1) | 16 | ms | ||
Program and erase endurance | TJ = -40°C to 105°C | 104 | 105 | cycles | ||
tRetention | Data retention duration (2) | TJ = 25°C | 100 | years | ||
tWord | Word or byte program time | See (3) | 64 | 85 | µs | |
tBlock, 0 | Block program time for first byte or word | See (3) | 49 | 65 | µs | |
tBlock, 1–(N–1) | Block program time for each additional byte or word, except for last byte or word | See (3) | 37 | 49 | µs | |
tBlock, N | Block program time for last byte or word | See (3) | 55 | 73 | µs | |
tErase | Erase time for segment, mass erase, and bank erase when available. | See (3) | 23 | 32 | ms | |
fMCLK,MGR | MCLK frequency in marginal read mode (FCTL4.MGR0 = 1 or FCTL4. MGR1 = 1) |
0 | 1 | MHz |