SLUSDB2A August 2018 – December 2021 UCC28951
PRODUCTION DATA
In this design to meet efficiency and voltage requirements 20 A, 650 V, CoolMOS FETs from Infineon are chosen for QA..QD.
The FET drain to source on resistance is:
The FET Specified COSS is:
The voltage across drain-to-source (VdsQA) where COSS was measured as a data sheet parameter:
Calculate average Coss [2] using Equation 49:
The QA FET gate charge is:
The voltage applied to FET gate to activate FET is:
Calculate QA losses (PQA) based on Rds(on)QA and gate charge (QAg) using Equation 52:
Recalculate the power budget using Equation 53: