SLAAEO4 November 2025 MSPM0G3507 , MSPM0L1306
Figure 1-1 shows the common platform memory map that all MSPM0 devices share. The map has four different memory regions.
MAIN flash is the memory used to store executable code and data. The MSPM0 device supports single bank or dual bank MAIN flash, see the device-specific data sheet for more details.
NONMAIN flash is a dedicated region of flash memory which stores the configuration data used by the boot configuration routine (BCR) configuration and bootstrap loader (BSL) configuration to boot the device. The BCR and BSL have configuration policies which can remain at the default values (as is typical during development and evaluation), or modified for specific purposes (as is typical during production programming) by altering the values programmed into the NONMAIN flash region.
FACTORY region is a memory-mapped flash region which provides read-only data describing the capabilities of a device, as well as any factory-provided trim information for use by application software.
The read-only memory (ROM) consists of an immutable root-of-trust boot configuration routine (BCR) and bootstrap loader (BSL). The BCR is always the first code to run on the Cortex-M0+ processor following a BOOTRST of the device before the main application starts. The BCR also runs using hardware or software invocation of the bootstrap loader (BSL) and authorizes the BSL entry. Figure 1-2 shows the high level boot flow for MSPM0 devices. For more details, refer to the Cybersecurity Enablers in MSPM0 MCUs application note.
The BCR sets up the device security policies, configures the device for operation, and optionally starts the BSL if ROM or Flash BSL presents. If the BCR starts the BSL, use the BSL to program or verify the device memory (flash and SRAM) using a standard serial interface (UART or I2C).