SBASAI9 December   2025 ADS112S14 , ADS122S14

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Switching Characteristics
    8. 5.8 Timing Diagrams
    9. 5.9 Typical Characteristics
  7. Parameter Measurement Information
    1. 6.1 Noise Performance
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Analog Inputs and Multiplexer
      2. 7.3.2  Programmable Gain Amplifier (PGA)
      3. 7.3.3  Voltage Reference
        1. 7.3.3.1 Internal Reference
        2. 7.3.3.2 External Reference
        3. 7.3.3.3 Reference Buffers
      4. 7.3.4  Clock Source
      5. 7.3.5  Delta-Sigma Modulator
      6. 7.3.6  Digital Filter
        1. 7.3.6.1 Sinc4 and Sinc4 + Sinc1 Filter
        2. 7.3.6.2 FIR Filter
        3. 7.3.6.3 Digital Filter Latency
        4. 7.3.6.4 Global-Chop Mode
      7. 7.3.7  Excitation Current Sources (IDACs)
      8. 7.3.8  Burn-Out Current Sources (BOCS)
      9. 7.3.9  General Purpose IOs (GPIOs)
        1. 7.3.9.1 FAULT Output
        2. 7.3.9.2 DRDY Output
      10. 7.3.10 System Monitors
        1. 7.3.10.1 Internal Short (Offset Calibration)
        2. 7.3.10.2 Internal Temperature Sensor
        3. 7.3.10.3 External Reference Voltage Readback
        4. 7.3.10.4 Power-Supply Readback
      11. 7.3.11 Monitors and Status Flags
        1. 7.3.11.1 Reset (RESETn flag)
        2. 7.3.11.2 AVDD Undervoltage Monitor (AVDD_UVn flag)
        3. 7.3.11.3 Reference Undervoltage Monitor (REV_UVn flag)
        4. 7.3.11.4 SPI CRC Fault (SPI_CRC_FAULTn flag)
        5. 7.3.11.5 Register Map CRC Fault (REG_MAP_CRC_FAULTn flag)
        6. 7.3.11.6 Internal Memory Fault (MEM_FAULTn flag)
        7. 7.3.11.7 Register Write Fault (REG_WRITE_FAULTn flag)
        8. 7.3.11.8 DRDY Indicator (DRDY bit)
        9. 7.3.11.9 Conversion Counter (CONV_COUNT[3:0])
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-up and Reset
        1. 7.4.1.1 Power-On Reset (POR)
        2. 7.4.1.2 Reset by Register Write
        3. 7.4.1.3 Reset by SPI Input Pattern
      2. 7.4.2 Operating Modes
        1. 7.4.2.1 Idle and Standby Mode
        2. 7.4.2.2 Power-Down Mode
        3. 7.4.2.3 Power-Scalable Conversion Modes
          1. 7.4.2.3.1 Continuous-Conversion Mode
          2. 7.4.2.3.2 Single-shot Conversion Mode
    5. 7.5 Programming
      1. 7.5.1  Serial Interface (SPI)
      2. 7.5.2  Serial Interface Signals
        1. 7.5.2.1 Chip Select (CS)
        2. 7.5.2.2 Serial Clock (SCLK)
        3. 7.5.2.3 Serial Data Input (SDI)
        4. 7.5.2.4 Serial Data Output/Data Ready (SDO/DRDY)
        5. 7.5.2.5 Data Ready (DRDY) Pin
      3. 7.5.3  Serial Interface Communication Structure
        1. 7.5.3.1 SPI Frame
        2. 7.5.3.2 STATUS Header
        3. 7.5.3.3 SPI CRC
      4. 7.5.4  Device Commands
        1. 7.5.4.1 No Operation (Read Conversion Data)
        2. 7.5.4.2 Read Register Command
        3. 7.5.4.3 Write Register Command
      5. 7.5.5  Continuous-Read Mode
        1. 7.5.5.1 Read Registers in Continuous-Read Mode
      6. 7.5.6  Daisy-Chain Operation
      7. 7.5.7  3-Wire SPI Mode
        1. 7.5.7.1 3-Wire SPI Mode Frame Re-Alignment
      8. 7.5.8  Monitoring for New Conversion Data
        1. 7.5.8.1 DRDY Pin or SDO/DRDY Pin Monitoring
        2. 7.5.8.2 Reading DRDY Bit and Conversion Counter
        3. 7.5.8.3 Clock Counting
      9. 7.5.9  DRDY Pin Behavior
      10. 7.5.10 Conversion Data Format
      11. 7.5.11 Register Map CRC
  9. Registers
  10. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Serial Interface Connections
      2. 9.1.2 Interfacing with Multiple Devices
      3. 9.1.3 Unused Inputs and Outputs
      4. 9.1.4 Device Initialization
    2. 9.2 Typical Applications
      1. 9.2.1 Software-Configurable RTD Measurement Input
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Performance Plots
        4. 9.2.1.4 Design Variant – 3-Wire RTD Measurement With Automatic Lead-Wire Compensation Using Two IDACs
      2. 9.2.2 Thermocouple Measurement With Cold-Junction Compensation Using a 2-wire RTD
      3. 9.2.3 Resistive Bridge Sensor Measurement With Temperature Compensation
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Power Supplies
      2. 9.3.2 Power-Supply Sequencing
      3. 9.3.3 Power-Supply Decoupling
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Internal Memory Fault (MEM_FAULTn flag)

The MEM_FAULTn flag indicates if a memory map CRC fault occurred. Similar to the register map CRC, the devices use a memory map CRC to check the internal memory for unintended bit changes. Changes to the internal memory bits can cause undetermined device behavior or degraded device performance. The memory map CRC is always enabled, except in standby and power-down mode, and constantly calculates the CRC value across the internal memory map. The devices compare the calculation result against a memory map CRC value that is stored in the memory map in production. If the internal calculation result and the stored memory map CRC value do not match, the MEM_FAULTn flag is set to 0b. No other action is taken by the device in the event of a memory map CRC fault. Perform a power cycle or reset the device when the MEM_FAULTn bit is 0b.