SBOK097B April   2025  – June 2025 TMP9R01-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Sample Identification
  6. 3 Irradiation Facility and Setup
  7. 4 Die Micro-section
  8. 5 Test Set-Up
  9. 6 SEL Results
    1. 6.1 TMP9R01-SEP SEL Data
  10. 7 SET Results
    1. 7.1 Summary of SET Results
      1. 7.1.1 Local Temperature Reads
        1. 7.1.1.1 Analog Alert Captures
    2. 7.2 Cross Section Events and Event Rate Calculations
  11. 8 Detailed Results Per Run
    1. 8.1 Detailed Run Raw Data
  12. 9 Summary
  13. 10Glossary
  14. 11Revision History

10 Glossary

Most of the definitions here below are from JEDEC standard JESD89A.

  • DUT: Device under test.
  • Fluence (of particle radiation incident on a surface): The total amount of particle radiant energy incident on a surface in a given period of time, divided by the area of the surface. In this document, Fluence is expressed in ions per cm2.
  • Flux: The time rate of flow of particle radiant energy incident on a surface, divided by the area of that surface. In this document, Flux is expressed in ions per cm2*s.
  • Single-Event Effect (SEE): Any measurable or observable change in state or performance of a microelectronic device, component, subsystem, or system (digital or analog) resulting from a single energetic particle strike. Single-event effects include single-event upset (SEU), multiple-bit upset (MBU), multiple-cell upset (MCU), single-event functional interrupt (SEFI), single-event latch-up (SEL).
  • Single-Event Transient (SET): A soft error caused by the transient signal induced by a single energetic particle strike.
  • Single-Event Latch-up (SEL): An abnormal high-current state in a device caused by the passage of a single energetic particle through sensitive regions of the device structure and resulting in the loss of device functionality. SEL can cause permanent damage to the device. If the device is not permanently damaged, power cycling of the device (off and back on) is necessary to restore normal operation. An example of SEL in a CMOS device is when the passage of a single particle induces the creation of parasitic bipolar (p-n-p-n) shorting of power to ground. Single-Event Latch-up (SEL) cross-section: the number of events per unit fluence. For chip SEL cross-section, the dimensions are cm2 per chip.
  • Error cross-section: the number of errors per unit fluence. For device error cross-section, the dimensions are cm2 per device. For bit error cross-section, the dimensions are cm2 per bit.
  • Tilt angle: tilt angle, rotation axis of the DUT board is perpendicular to the beam axis; roll angle, board rotation axis is parallel to the beam axis
  • Weibull Function: F(x) = A (1- exp{-[(x-x0)/W]s})
    • x = effective LET in MeV-cm2 /milligram;
    • F(x) = SEE cross-section in square-cm2/bit;
    • A = limiting or plateau cross-section;
    • x0 = onset parameter, such that F(x) = 0 for x < x0;
    • W = width parameter;
    • s = a dimensionless exponent