SBOK102 July   2025 INA1H94-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2SEE Mechanisms
  6. 3Irradiation Facilities and Telemetry
  7. 4Test Device and Test Board Information
    1. 4.1 Qualification Circuits and Boards
    2. 4.2 Characterization Devices and Test Board Schematics
  8. 5Results
    1. 5.1 SEL Qualification Results
    2. 5.2 SET Characterization Results: MSU FRIB Linac
    3. 5.3 Analysis
    4. 5.4 Weibull Fit
  9. 6Summary
  10.   A MSU Results Appendix
  11.   B Confidence Interval Calculations
  12.   C References

4.2 Characterization Devices and Test Board Schematics

Heavy ions were used to irradiate the devices. A nominal flux of 1 × 105 ions / s-cm2 was used for SEL characterization, at 125°C die temperature. Nominal flux of 1 × 105 ions / s-cm2 was used for SET characterization, at ambient temperature.

For SEE characterization, the INA1H94-SP was biased with bipolar split supplies. The circuit was connected as shown on Figure 4-4. Different supply voltages, input common-mode voltages and differential voltage conditions were tested.

SEE Characterization Board Schematic (Site 1 Only) Figure 4-4 SEE Characterization Board Schematic (Site 1 Only)

Input and supply voltages were provided by SMU PXI cards, connected with banana cables. A common input signal was applied to all channels. Figure 4-5 shows the decoupling capacitance scheme used on each board. Current was monitored over time for both V+ and V-. For SET testing, the device outputs were monitored using oscilloscope PXI cards, connected with BNC cables. 100Ω of series isolation resistance was used on the output channel to drive the cable capacitance.

Characterization Board Voltage Supply Connections Figure 4-5 Characterization Board Voltage Supply Connections