SCDS453E June   2024  – October 2025 TMUXS7614D

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Thermal Information
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Source or Drain Current through Switch
    6. 5.6  Electrical Characteristics (Global)
    7. 5.7  Electrical Characteristics (±15V Dual Supply)
    8. 5.8  Switching Characteristics (±15V Dual Supply)
    9. 5.9  Electrical Characteristics (±20V Dual Supply)
    10. 5.10 Switching Characteristics (±20V Dual Supply)
    11. 5.11 Electrical Characteristics (+37.5V/–12.5V Dual Supply)
    12. 5.12 Switching Characteristics (+37.5V/–12.5V Dual Supply)
    13. 5.13 Electrical Characteristics (12V Single Supply)
    14. 5.14 Switching Characteristics (12V Single Supply)
    15. 5.15 SPI Timing Characteristics (2.7V to 5.5V)
    16. 5.16 SPI Timing Characteristics (1.8V to 2.7V)
    17. 5.17 Timing Diagrams
    18. 5.18 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1  On-Resistance
    2. 6.2  Off-Leakage Current
    3. 6.3  On-Leakage Current
    4. 6.4  tON and tOFF Time
    5. 6.5  Break-Before-Make
    6. 6.6  Charge Injection
    7. 6.7  Off Isolation
    8. 6.8  Channel-to-Channel Crosstalk
    9. 6.9  Bandwidth
    10. 6.10 THD + Noise
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bidirectional Operation
      2. 7.3.2 Rail-to-Rail Operation
      3. 7.3.3 1.8V Logic Compatible Inputs
      4. 7.3.4 Flat On-Resistance
      5. 7.3.5 Power-Up Sequence Free
    4. 7.4 SPI Operation
      1. 7.4.1 Address Mode
      2. 7.4.2 Burst Mode
      3. 7.4.3 Daisy Chain Mode
      4. 7.4.4 Error Detection
        1. 7.4.4.1 Address R/W Error Flag
        2. 7.4.4.2 SCLK Count Error Flag
        3. 7.4.4.3 CRC (Cyclic Redundancy Check) Enable and Error Flag
        4. 7.4.4.4 Clearing Error Flags
      5. 7.4.5 Software Reset
    5. 7.5 Device Functional Modes
    6. 7.6 Register Map
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Recommended Reflow Profile
    4. 8.4 Thermal Considerations
    5. 8.5 Power Supply Recommendations
    6. 8.6 Layout
      1. 8.6.1 Layout Guidelines
      2. 8.6.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Tape and Reel Information
    2. 11.2 Mechanical Data

8.2 Typical Application

The implementation of a parametric measurement unit (PMU) in the semiconductor automatic test equipment (ATE) application is one example of precision performance to take advantage of.

In automated test equipment (ATE) systems, the parametric measurement unit (PMU) is tasked to measure device (DUT) parametric information in terms of voltage and current. When measuring voltage, current is applied at the DUT pin, and the current range can be adjusted by changing the value of the internal sense resistor. Sometimes there is a need, depending on the DUT, to use even higher testing current than natively supported by the system. A 8 channel SPST switch can be used with an external higher current amplifier and resistor to achieve the flexibility. The PMU operating voltage is typically in mid voltage (up to 36V). An appropriate switch like the TMUXS7614D with a low leakage current (0.013nA typical) works well in these applications because of it's minimal impact on measurement accuracy, and the low RON and flat RON_FLATNESS offered allows the current range to be controlled more precisely. Figure 8-1 shows simplified diagram of such implementations in memory and semiconductor test equipment.

TMUXS7614D High Current Range Selection Using External ResistorFigure 8-1 High Current Range Selection Using External Resistor