SLAAED5A June   2023  – September 2025 AFE11612-SEP , OPA4H199-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. LDMOS and GaN Power Amplifier FET PA Basics
  5. VGS Compensation
  6. Sequencing
  7. An Integrated PA Biasing Solution
  8. Negative Biasing for GaN PAs
  9. Fast Switching for TDD Applications
  10. VDRAIN Switching Circuit
  11. Controlled Gate-Sequencing Circuit
  12. VDRAIN Monitoring
  13. 10External Negative Power Supply Monitoring
  14. 11PA Temperature Monitoring
  15. 12Summary
  16. 13References
  17. 14Revision History

VGS Compensation

IDS is dependent on the temperature of the PA. The IDS variations due to thermal drift create the need to compensate the PA by adjusting one of the other two variables in the system: VDRAIN or VGS. Although there are many reasons why adjusting VDRAIN is implemented in different RF applications, the response of the output power is minimal compared to the change in the VDRAIN voltage, as shown in Figure 1-2. Adjusting VGS allows for faster response time and total amplitude of the output power making it more practical for temperature compensation and other applications.

 GaN PA VGS Bias Voltage vs Temperature to maintain constant IDSFigure 2-1 GaN PA VGS Bias Voltage vs Temperature to maintain constant IDS

Figure 2-1 shows VGS needs to be adjusted to ensure a static IDS due to thermal drift. Applications utilizing these PAs require implementing this kind of compensation to ensure that the power of the antenna system is tightly controlled. VGS compensation can be implemented by either measuring the temperature of the PA, or measuring the IDS using a current shunt and adjusting the VGS accordingly.