SLAAED5A June   2023  – September 2025 AFE11612-SEP , OPA4H199-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 LDMOS and GaN Power Amplifier FET PA Basics
  5. 2 VGS Compensation
  6. 3 Sequencing
  7. 4 An Integrated PA Biasing Solution
  8. 5 Negative Biasing for GaN PAs
  9. 6 Fast Switching for TDD Applications
  10. 7 VDRAIN Switching Circuit
  11. 8 Controlled Gate-Sequencing Circuit
  12. 9 VDRAIN Monitoring
  13. 10External Negative Power Supply Monitoring
  14. 11PA Temperature Monitoring
  15. 12Summary
  16. 13References
  17. 14Revision History

12 Summary

Power amplifier behavioral nuances make discrete VGS compensation solutions complex and costly. The AFE11612-SEP simplifies the solution while adding beneficial features, such as gate monitoring, VDRAIN monitoring, temperature monitoring, and supply collapse detection for start-up and shutdown sequence control, to make the device an excellent value.

Table 12-1 Device Recommendations
DeviceOptimized ParametersTotal Ionizing Dose (TID) CharacterizedSingle Event Latch-Up (SEL) Characterized
AFE11612-SEPSpace enhanced 12 12-bit DACs with 16 12-bit ADC inputs.20 krad(SI)Immune to 43 MeV-cm2/mg at 125°C
OPA4H199-SEPSpace enhanced high voltage quad-output operational amplifier.30 krad(SI)Immune to 43 MeV-cm2 /mg at 125°C