SLOS187A February   1997  – July 2025 TLV2322 , TLV2324

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  Dissipation Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Electrical Characteristics, TLV2322
    5. 5.5  Operating Characteristics TLV2322, VDD = 3V
    6. 5.6  Operating Characteristics, TLV2322, VDD = 5V
    7. 5.7  Electrical Characteristics, TLV2324
    8. 5.8  Operating Characteristics, TLV2324, VDD = 3V
    9. 5.9  Operating Characteristics, TLV2324, VDD = 5V
    10. 5.10 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Single-Supply Versus Split-Supply Test Circuits
    2. 6.2 Input Bias Current
    3. 6.3 Low-level Output Voltage
    4. 6.4 Input Offset Voltage Temperature Coefficient
    5. 6.5 Full-Power Response
    6. 6.6 Test Time
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Single-Supply Operation
      2. 7.1.2 Input Characteristics
      3. 7.1.3 Noise Performance
      4. 7.1.4 Feedback
      5. 7.1.5 Electrostatic-Discharge Protection
      6. 7.1.6 Latch-Up
      7. 7.1.7 Output Characteristics
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

6.6 Test Time

Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume, short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET devices and require longer test times than bipolar and BiFET devices. The problem becomes more pronounced with reduced supply levels and lower temperatures.