SLUAB15 April 2025 LM2005 , LM2101 , LM2103 , LM2104 , LM2105 , UCC27200 , UCC27200-Q1 , UCC27200A , UCC27201 , UCC27201A , UCC27201A-Q1 , UCC27211 , UCC27211A , UCC27211A-Q1 , UCC27212 , UCC27212A-Q1 , UCC27282 , UCC27282-Q1 , UCC27284 , UCC27284-Q1 , UCC27288 , UCC27289 , UCC27301A , UCC27301A-Q1 , UCC27302A , UCC27302A-Q1 , UCC27311A , UCC27311A-Q1
Power demanding applications require high efficiency operation and the utilization of multiple phases to support large current outputs. These individual phases can be disabled during low power states to improve efficiency by eliminating the losses in the disabled powertrain. In these multiphase systems when light load conditions occur, some phases are disabled to reduce switching losses. When enabling a disabled phase, there are high currents within the gate driver associated with recharging the bootstrap capacitor. The FETs are also associated with high current applications that demand high gate drive currents to ensure fast switching transitions and require fast switching characteristics of the gate driver to ensure maximum efficiency. Overall, in applications with elevated power levels, a high current gate driver is best. The latest high current, half-bridge gate driver in TI’s 120V portfolio is the UCC273x1A(-Q1) which features 3.7A source current and 4.5A sink current for driving these FETs. High power applications result in greater switching losses, therefore this higher current driver is needed to speed up the switching transitions and reduce the switching losses.