The UCC273 01A -Q1 automotive half-bridge driver is a robust N-channel MOSFET driver with an absolute maximum switch node (HS) voltage rating of 115 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3.7-A peak source and 4.5-A peak sink current capability allows the UCC273 01A -Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node of the UCC273 01A -Q1 (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.
The input structure can directly handle –10 VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The LI and HI inputs are also independent of supply voltage and have a 20-V absolute maximum rating.
The low-side and high-side gate drivers are independently controlled and matched to 4 ns between the turn on and turn off of each other. However, the inputs are interlocked so that both HO and LO outputs cannot be high simultaneously. An on-chip 120-V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.
The UCC273 01A -Q1 automotive half-bridge driver is a robust N-channel MOSFET driver with an absolute maximum switch node (HS) voltage rating of 115 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3.7-A peak source and 4.5-A peak sink current capability allows the UCC273 01A -Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node of the UCC273 01A -Q1 (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.
The input structure can directly handle –10 VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The LI and HI inputs are also independent of supply voltage and have a 20-V absolute maximum rating.
The low-side and high-side gate drivers are independently controlled and matched to 4 ns between the turn on and turn off of each other. However, the inputs are interlocked so that both HO and LO outputs cannot be high simultaneously. An on-chip 120-V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.