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UCC27301A-Q1

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Automotive 120-V 4-A half-bridge driver with 8-V UVLO, enable and interlock

Product details

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Negative voltage handling Driver configuration Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Negative voltage handling Driver configuration Dual, Noninverting, TTL compatible
HSOIC (DDA) 8 29.4 mm² 4.9 x 6 VSON (DRC) 10 9 mm² 3 x 3
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Temperature grade 1 (T J = –40°C to 150°C)
    • HBM ESD classification level 1B
    • CDM ESD classification level C3
  • Drives two N-channel MOSFETs in high-side and low-side configuration with inputs interlocked
  • Cross-conduction protection prevents short-circuit by ensuring both outputs cannot be on simultaneously
  • Maximum boot voltage 120-V DC
  • 3.7-A sink, 4.5-A source output currents
  • Integrated bootstrap diode
  • Input pins can tolerate –10 V to +20 V and are independent of supply voltage range
  • TTL compatible inputs
  • 8-V to 17-V VDD operating range (20-V abs max) with UVLO
  • 7.2-ns rise and 5.5-ns fall time with 1000-pF load
  • Enable/disable functionality with low current (7 µA) consumption when disabled (DRC package only)
  • Fast propagation delay times (20 ns typical)
  • 4-ns delay matching
  • Junction temperature specified from –40°C to +150°C
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Temperature grade 1 (T J = –40°C to 150°C)
    • HBM ESD classification level 1B
    • CDM ESD classification level C3
  • Drives two N-channel MOSFETs in high-side and low-side configuration with inputs interlocked
  • Cross-conduction protection prevents short-circuit by ensuring both outputs cannot be on simultaneously
  • Maximum boot voltage 120-V DC
  • 3.7-A sink, 4.5-A source output currents
  • Integrated bootstrap diode
  • Input pins can tolerate –10 V to +20 V and are independent of supply voltage range
  • TTL compatible inputs
  • 8-V to 17-V VDD operating range (20-V abs max) with UVLO
  • 7.2-ns rise and 5.5-ns fall time with 1000-pF load
  • Enable/disable functionality with low current (7 µA) consumption when disabled (DRC package only)
  • Fast propagation delay times (20 ns typical)
  • 4-ns delay matching
  • Junction temperature specified from –40°C to +150°C

The UCC273 01A -Q1 automotive half-bridge driver is a robust N-channel MOSFET driver with an absolute maximum switch node (HS) voltage rating of 115 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3.7-A peak source and 4.5-A peak sink current capability allows the UCC273 01A -Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node of the UCC273 01A -Q1 (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The input structure can directly handle –10 VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The LI and HI inputs are also independent of supply voltage and have a 20-V absolute maximum rating.

The low-side and high-side gate drivers are independently controlled and matched to 4 ns between the turn on and turn off of each other. However, the inputs are interlocked so that both HO and LO outputs cannot be high simultaneously. An on-chip 120-V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC273 01A -Q1 automotive half-bridge driver is a robust N-channel MOSFET driver with an absolute maximum switch node (HS) voltage rating of 115 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3.7-A peak source and 4.5-A peak sink current capability allows the UCC273 01A -Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node of the UCC273 01A -Q1 (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The input structure can directly handle –10 VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The LI and HI inputs are also independent of supply voltage and have a 20-V absolute maximum rating.

The low-side and high-side gate drivers are independently controlled and matched to 4 ns between the turn on and turn off of each other. However, the inputs are interlocked so that both HO and LO outputs cannot be high simultaneously. An on-chip 120-V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

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Technical documentation

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Type Title Date
* Data sheet UCC27301A-Q1 Automotive 120-V, 3.7-A/4.5-A Half-Bridge Driver with 8-V UVLO, Cross Conduction Protection, and Enable datasheet (Rev. B) PDF | HTML 01 Aug 2023
Application note Selecting Gate Drivers for HVAC Systems PDF | HTML 04 Apr 2024

Design & development

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Evaluation board

UCC27282EVM-335 — UCC27282 120-V, 3-A, 5-V UVLO high-side low-side gate driver evaluation module

UCC27282EVM-335 is designed for evaluating UCC27282DRC, which is a 120V half bridge gate driver with high source and sink peak current capability. This EVM could be served to evaluate the driver IC against its datasheet. The EVM can also be used as Driver IC component selection guide. The EVM can (...)
User guide: PDF
Not available on TI.com
Evaluation board

UCC27288EVM — UCC27288 100-V, 3-A, 8-V UVLO half-bridge gate driver evaluation module

UCC27288EVM is designed for evaluating UCC27288D, which is a 100-V half bridge gate driver with 2.5-A peak source current and 3.5-A peak sink current capability. This EVM serves as a reference design for driving power MOSFETs with up to 20-V drive voltage.
User guide: PDF
Not available on TI.com
Simulation model

UCC27301AQDDARQ1 PSpice Model

SLUM893.ZIP (28 KB) - PSpice Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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HSOIC (DDA) 8 View options
VSON (DRC) 10 View options

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