SLUSG46 March   2026 BQ25785

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics BQ2578X
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power-Up Sequence
      2. 7.3.2  MODE Pin Detection
      3. 7.3.3  REGN Regulator (REGN LDO)
      4. 7.3.4  Independent Comparator Function
      5. 7.3.5  Battery Charging Management
        1. 7.3.5.1 Autonomous Charging Cycle
        2. 7.3.5.2 Battery Charging Profile
        3. 7.3.5.3 Charging Termination
        4. 7.3.5.4 Charging Safety Timer
      6. 7.3.6  Temperature Regulation (TREG)
      7. 7.3.7  Vmin Active Protection (VAP) When Battery Only Mode
      8. 7.3.8  Two Level Battery Discharge Current Limit
      9. 7.3.9  Fast Role Swap Feature
      10. 7.3.10 CHRG_OK Indicator
      11. 7.3.11 Input and Charge Current Sensing
      12. 7.3.12 Input Current and Voltage Limit Setup
      13. 7.3.13 Battery Cell Configuration
      14. 7.3.14 Device HIZ State
      15. 7.3.15 USB On-The-Go (OTG)
      16. 7.3.16 Quasi-dual Phase Converter Operation
      17. 7.3.17 Continuous Conduction Mode (CCM)
      18. 7.3.18 Pulse Frequency Modulation (PFM)
      19. 7.3.19 Switching Frequency and Dithering Feature
      20. 7.3.20 Current and Power Monitor
        1. 7.3.20.1 High-Accuracy Current Sense Amplifier (IADPT and IBAT)
        2. 7.3.20.2 High-Accuracy Power Sense Amplifier (PSYS)
      21. 7.3.21 Input Source Dynamic Power Management
      22. 7.3.22 Integrated 16-Bit ADC for Monitoring
      23. 7.3.23 Input Current Optimizer (ICO)
      24. 7.3.24 Two-Level Adapter Current Limit (Peak Power Mode)
      25. 7.3.25 Processor Hot Indication
        1. 7.3.25.1 PROCHOT During Low Power Mode
        2. 7.3.25.2 PROCHOT Status
      26. 7.3.26 Device Protection
        1. 7.3.26.1  Watchdog Timer (WD)
        2. 7.3.26.2  Input Overvoltage Protection (ACOV)
        3. 7.3.26.3  Input Overcurrent Protection (ACOC)
        4. 7.3.26.4  System Overvoltage Protection (SYSOVP)
        5. 7.3.26.5  System Voltage Maximum Regulation (SYS_MAX)
        6. 7.3.26.6  Battery Overvoltage Protection (BATOVP)
        7. 7.3.26.7  Battery Charge Overcurrent Protection (BATCOC)
        8. 7.3.26.8  Battery Discharge Overcurrent Protection (BATDOC)
        9. 7.3.26.9  BATFET Charge Current Clamp Protection Under LDO Regulation Mode
        10. 7.3.26.10 Sleep Comparator Protection Between VBUS and ACP_A (SC_VBUSACP)
        11. 7.3.26.11 REGN Power Good Protection (REGN_PG)
        12. 7.3.26.12 System Under Voltage Lockout (VSYS_UVP) and Hiccup Mode
        13. 7.3.26.13 OTG Mode Over Voltage Protection (OTG_OVP)
        14. 7.3.26.14 OTG Mode Under Voltage Protection (OTG_UVP)
        15. 7.3.26.15 Thermal Shutdown (TSHUT)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Forward Mode
        1. 7.4.1.1 System Voltage Regulation with Narrow VDC Architecture
        2. 7.4.1.2 Battery Charging
      2. 7.4.2 USB On-The-Go Mode
      3. 7.4.3 Pass Through Mode (PTM)-Patented Technology
      4. 7.4.4 Learn Mode
    5. 7.5 Programming
      1. 7.5.1 SMBus Interface
        1. 7.5.1.1 SMBus Write-Word and Read-Word Protocols
        2. 7.5.1.2 Timing Diagrams
    6. 7.6 BQ25785 Register Map
    7. 7.7 BQ25785 Registers
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Snubber and Filter for Voltage Spike Damping
        2. 8.2.2.2 ACP-ACN Input Filter
        3. 8.2.2.3 Inductor Selection
        4. 8.2.2.4 Input Capacitor
        5. 8.2.2.5 Output Capacitor
        6. 8.2.2.6 Power MOSFETs Selection
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
        1. 8.4.2.1 Layout Example Reference Top View
  10. Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

BATFET Charge Current Clamp Protection Under LDO Regulation Mode

When charger LDO mode is enabled (EN_LDO=1b) and VBAT voltage falls below VSYS_MIN() during charging, the charger must regulate the system output voltage fixed at VSYS_MIN() and battery charging current is regulated by BATFET gate voltage achieving LDO mode operation. Both charger pre-charge and trickle charge status are implemented through this LDO mode operation. Under both pre-charge and trickle charge there are corresponding current limit referring to Battery Charging Profile. Under LDO mode larger VSYS_MIN() minus VBAT delta and larger charge current must generate more thermal dissipation at BATFET which must be properly limited to verify safe operation. Therefore. besides pre-charge and trickle charge current clamp mentioned above, we have additional two levels current clamp to verify that the maximum BATFET dissipation loss is below 2W based on the relationship between VBAT and VSYS_MIN() setting. Refer also to Table 7-11. The lower current clamp dominates the final maximum charge current limit considering IPRECHG() user register upper clamp, battery short trickle charge current clamp (128mA) and two levels BATFET current clamp below.

Table 7-11 BATFET Charge Current Clamp Under LDO Mode
NAMEVBAT VS VSYS_MIN()MAXIMUM CHARGE CURRENT CLAMP
IBATFET_CLAMP11V<VSYS_MIN()-VBAT<4V

512mA (Internal Clamp no impact on IPRECHG() register)

IBATFET_CLAMP24V<VSYS_MIN()-VBAT

128mA (Internal Clamp no impact on IPRECHG() register)

When charger LDO mode is disabled (EN_LDO=0b), then BATFET is either in a fully on or fully off status. When charge is disabled the system voltage is regulated at 5V (VBAT< 5V) or VBAT+160mV (VBAT>5V). However, when the charge is enabled, then VSYS is regulated close to VBAT to implement target charging current and VSYS_MIN regulation is not effective.