SLVAF82B August   2022  – January 2024 ESD122 , ESD204 , ESD224 , ESD2CANXL24-Q1 , ESD321 , ESD341 , ESD401 , ESD441 , ESD751 , ESD752 , ESDS302 , ESDS304 , ESDS312 , HD3SS3220 , SN65240 , TPD1E01B04 , TPD1E01B04-Q1 , TPD1E04U04 , TPD1E05U06 , TPD1E05U06-Q1 , TPD1E0B04 , TPD1E10B06 , TPD1E10B06-Q1 , TPD1E1B04 , TPD1E6B06 , TPD2E001 , TPD2E001-Q1 , TPD2E009 , TPD2E1B06 , TPD2EUSB30 , TPD2S017 , TPD3E001 , TPD4E001-Q1 , TPD4E004 , TPD4E02B04 , TPD4E02B04-Q1 , TPD4E110 , TPD4S009 , TPD6E004 , TPD6E05U06 , TPS65982 , TPS65994AD , TSD05C , TUSB211 , TUSB4020BI , TUSB4041I , TUSB8041 , TVS0500 , TVS1400 , TVS1800 , TVS2200

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Overview
  5. 2 USB 1.1
    1. 2.1 Overview
    2. 2.2 ESD Protection Requirements
    3. 2.3 System Level Design
  6. 3 USB 2.0 Circuit Protection
    1. 3.1 Overview
    2. 3.2 ESD Protection Requirements
    3. 3.3 System Level Designs
  7. 4 USB 5Gbps
    1. 4.1 Overview
    2. 4.2 ESD Protection Requirements
    3. 4.3 System Level Designs
  8. 5 USB 10Gbps
    1. 5.1 Overview
    2. 5.2 ESD Protection Requirements
    3. 5.3 System Level Designs
  9. 6 USB 20Gbps
    1. 6.1 Overview
    2. 6.2 ESD Protection Requirements
    3. 6.3 System Level Designs
  10. 7 USB Type-C® Protection
    1. 7.1 Overview
    2. 7.2 ESD Protection Requirements
    3. 7.3 System Level Designs
  11. 8 USB Power Delivery (USB-PD) Surge Protection
    1. 8.1 Overview
    2. 8.2 VBUS Protection
    3. 8.3 Short to VBUS
  12. 9 References
  13. 10Revision History

5.2 ESD Protection Requirements

For protecting USB 10Gbps, follow the list of parameters related to each pin:

  • D+, D-, TX1+, TX1-, RX1+, RX1-, TX2+, TX2-, RX2+, RX2-
    • Working Voltage: The reverse working voltage (VRWM) of the protection diode is recommended to be greater than or equal to the operating voltage of the system being protected. For USB 10Gbps data lines, the typical operating voltage range is 3.3V. This translates to a working voltage of greater than or equal to 3.3V.
    • Clamping Voltage: There can be many systems utilizing USB. This results in the clamping voltage of the ESD diode being dependent on the circuity downstream from the USB connector. The clamping voltage is recommended to be below the absolute maximum rating of the downstream component.
    • Capacitance (D+, D-): Since D+ and D- are specific to USB 2.0 data transfer, the signal speeds can reach up to 480Mbps. An ESD diode with a capacitance less than 4pF is recommended.
    • Capacitance (TX+, TX-, RX+, RX-): Since the signal speeds can reach up to 10Gbps, a low-capacitance ESD diode with less than 0.3pF is recommended to support the signal speed. For USB 3.2 Gen 1x2, there are two lanes each with 5Gbps, a capacitance less than 0.5pF is recommended to support each lane.
    • IEC 61000-4-2 Rating: Real-world ESD strikes are defined by the IEC 61000-4-2 testing standard. This standard consists of two measurements: contact and air-gap discharge. The higher the contact and air-gap rating, the higher the voltage a device can withstand. For USB 10Gbps, a minimum IEC 61000-4-2 rating of 8kV for contact and 15kV for air-gap is recommended.
  • VBUS
    • Working Voltage: For VBUS, the operating voltage is 5V. An ESD diode with a working voltage greater than or equal to 5V is recommended.

Table 8-8 lists devices that support these specifications.

Table 5-1 USB 10Gbps Device Recommendations
DeviceVRWM (V)IEC 61000-4-2 (kV) (Contact/Air-gap)Capacitance (pF)Channel CountPackage Size (mm)Recommended For
ESD321 3.6 30/30 0.9 1 DFN1006 (1.00 x 0.60), SOD523(1.60 x 0.80) D+, D-
TPD1E01B043.615/170.181DFN0603 (0.60 x 0.30), DFN1006 (1.00 x 0.60)D+, D-, TX+, TX-, RX+, RX-
ESD1223.617/170.22DFN1006, 3 pins (1.00 x 0.60)D+, D-, TX+, TX-, RX+, RX-
TPD4E02B043.612/150.254USON (2.5 x 1.0)D+, D-, TX+, TX-, RX+, RX-
ESD441 5.5 30/30 1 1 DFN0603 (0.60 x 0.30) VBUS