SLVSDM4F November   2018  – October 2026 TPS1HA08-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
    1. 5.1 Recommended Connections for Unused Pins
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 SNS Timing Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Device Nomenclature
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Protection Mechanisms
        1. 8.3.1.1 Thermal Shutdown
        2. 8.3.1.2 Current Limit
          1. 8.3.1.2.1 Current Limit Foldback
          2. 8.3.1.2.2 Selectable Current Limit Threshold
          3. 8.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 8.3.1.2.4 VBB During Short-to-Ground
        3. 8.3.1.3 Energy Limit
        4. 8.3.1.4 Voltage Transients
          1. 8.3.1.4.1 Load Dump
          2. 8.3.1.4.2 Driving Inductive and Capacitive Loads
        5. 8.3.1.5 Reverse Battery
        6. 8.3.1.6 Fault Event – Timing Diagrams
      2. 8.3.2 Diagnostic Mechanisms
        1. 8.3.2.1 VOUT Short-to-Battery and Open-Load
          1. 8.3.2.1.1 Detection with Switch Enabled
          2. 8.3.2.1.2 Detection with Switch Disabled
        2. 8.3.2.2 SNS Output
          1. 8.3.2.2.1 RSNS Value
            1. 8.3.2.2.1.1 High Accuracy Load Current Sense
            2. 8.3.2.2.1.2 SNS Output Filter
        3. 8.3.2.3 ST Pin
        4. 8.3.2.4 Fault Indication and SNS Mux
        5. 8.3.2.5 Resistor Sharing
        6. 8.3.2.6 High-Frequency, Low Duty-Cycle Current Sensing
      3. 8.3.3 Enable Watchdog
    4. 8.4 Device Functional Modes
      1. 8.4.1 Off
      2. 8.4.2 Standby
      3. 8.4.3 Diagnostic
      4. 8.4.4 Standby Delay
      5. 8.4.5 Active
      6. 8.4.6 Fault
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Ground Protection Network
      2. 9.1.2 Interface with Microcontroller
      3. 9.1.3 I/O Protection
      4. 9.1.4 Inverse Current
      5. 9.1.5 Loss of GND
      6. 9.1.6 Automotive Standards
        1. 9.1.6.1 ISO7637-2
        2. 9.1.6.2 AEC – Q100-012 Short Circuit Reliability
      7. 9.1.7 Thermal Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Thermal Considerations
        2. 9.2.2.2 Diagnostics
          1. 9.2.2.2.1 Selecting the RISNS Value
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

9.2.2.1 Thermal Considerations

The DC current under maximum load power condition is around 7.03A. Power dissipation in the switch is calculated in Equation 9. RON is assumed to be 20mΩ because this is the maximum specification. In practice, RON is lower.

Equation 9. P F E T = I 2 × R O N
Equation 10. P F E T = ( 7.03 A ) 2 × 20 m Ω = 0.988 W

Calculate the junction temperature of the device using Equation 11 and the RθJA value from the Specifications section.

Equation 11. T J = T A + R θ J A × P F E T
T J = 85 ° C + 32.8 ° C / W × 0.988 W = 117.4 ° C

The maximum junction temperature rating for TPS1HA08-Q1 device is TJ = 150°C. Based on the above example calculation, the device temperature stays below the maximum rating.