SLVSDM4F November   2018  – October 2026 TPS1HA08-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
    1. 5.1 Recommended Connections for Unused Pins
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 SNS Timing Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Device Nomenclature
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Protection Mechanisms
        1. 8.3.1.1 Thermal Shutdown
        2. 8.3.1.2 Current Limit
          1. 8.3.1.2.1 Current Limit Foldback
          2. 8.3.1.2.2 Selectable Current Limit Threshold
          3. 8.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 8.3.1.2.4 VBB During Short-to-Ground
        3. 8.3.1.3 Energy Limit
        4. 8.3.1.4 Voltage Transients
          1. 8.3.1.4.1 Load Dump
          2. 8.3.1.4.2 Driving Inductive and Capacitive Loads
        5. 8.3.1.5 Reverse Battery
        6. 8.3.1.6 Fault Event – Timing Diagrams
      2. 8.3.2 Diagnostic Mechanisms
        1. 8.3.2.1 VOUT Short-to-Battery and Open-Load
          1. 8.3.2.1.1 Detection with Switch Enabled
          2. 8.3.2.1.2 Detection with Switch Disabled
        2. 8.3.2.2 SNS Output
          1. 8.3.2.2.1 RSNS Value
            1. 8.3.2.2.1.1 High Accuracy Load Current Sense
            2. 8.3.2.2.1.2 SNS Output Filter
        3. 8.3.2.3 ST Pin
        4. 8.3.2.4 Fault Indication and SNS Mux
        5. 8.3.2.5 Resistor Sharing
        6. 8.3.2.6 High-Frequency, Low Duty-Cycle Current Sensing
      3. 8.3.3 Enable Watchdog
    4. 8.4 Device Functional Modes
      1. 8.4.1 Off
      2. 8.4.2 Standby
      3. 8.4.3 Diagnostic
      4. 8.4.4 Standby Delay
      5. 8.4.5 Active
      6. 8.4.6 Fault
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Ground Protection Network
      2. 9.1.2 Interface with Microcontroller
      3. 9.1.3 I/O Protection
      4. 9.1.4 Inverse Current
      5. 9.1.5 Loss of GND
      6. 9.1.6 Automotive Standards
        1. 9.1.6.1 ISO7637-2
        2. 9.1.6.2 AEC – Q100-012 Short Circuit Reliability
      7. 9.1.7 Thermal Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Thermal Considerations
        2. 9.2.2.2 Diagnostics
          1. 9.2.2.2.1 Selecting the RISNS Value
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

9.1.6.2 AEC – Q100-012 Short Circuit Reliability

The TPS1HA08-Q1 is tested according to the AEC - Q100-012 Short Circuit Reliability standard. This test is performed to demonstrate the robustness of the device against VOUT short-to-ground events. Test results are summarized in Table 9-3. For further details, see also the AEC - Q100-012 standard document or TI's Short Circuit Reliability Test for Smart Power Switches application note.

Test conditions:

  • LATCH = 0V
  • TA = –40°C
  • 10 units from 3 separate lots for a total of 30 units
  • Lsupply = 5μH, Rsupply = 10mΩ
  • VBB = 14V

Test procedure:

  • Parametric data is collected on each unit pre-stress.
  • Each unit is enabled into a short circuit with the required short-circuit cycles or duration as specified.
  • Parametric data is re-collected on each unit post-stress to verify that no parametric shift is observed.

The cold repetitive test is run at –40°C which is the worst-case condition for the TPS1HA08-Q1. The current limit threshold is highest at cold temperature; hence, the short-circuit pulse contains more energy at cold temperature. The cold repetitive test refers to the device being given time to cool down between pulses, within than being run at a cold temperature. The load short circuit is the worst-case situation, since the energy stored in the cable inductance can cause additional harm. The fast response of the device establishes that current limiting occurs quickly and at a current close to the load short condition. In addition, the hot repetitive test is performed as well.

Table 9-3 AEC - Q100-012 Test Results
TESTLOCATION OF SHORTDEVICE VERSIONNO. OF CYCLESNO. OF UNITSNO. OF FAILS
Cold Repetitive - Long PulseLoad Short Circuit, Lshort = 5μH, Rshort = 100mΩ, TA = –40°CD200k300
Hot Repetitive - Long PulseTerminal Short Circuit, Lshort = 5μH, Rshort = 100mΩ, TA = 25°CD100 hours300