SLVSDM4F November   2018  – October 2026 TPS1HA08-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
    1. 5.1 Recommended Connections for Unused Pins
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 SNS Timing Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Device Nomenclature
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Protection Mechanisms
        1. 8.3.1.1 Thermal Shutdown
        2. 8.3.1.2 Current Limit
          1. 8.3.1.2.1 Current Limit Foldback
          2. 8.3.1.2.2 Selectable Current Limit Threshold
          3. 8.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 8.3.1.2.4 VBB During Short-to-Ground
        3. 8.3.1.3 Energy Limit
        4. 8.3.1.4 Voltage Transients
          1. 8.3.1.4.1 Load Dump
          2. 8.3.1.4.2 Driving Inductive and Capacitive Loads
        5. 8.3.1.5 Reverse Battery
        6. 8.3.1.6 Fault Event – Timing Diagrams
      2. 8.3.2 Diagnostic Mechanisms
        1. 8.3.2.1 VOUT Short-to-Battery and Open-Load
          1. 8.3.2.1.1 Detection with Switch Enabled
          2. 8.3.2.1.2 Detection with Switch Disabled
        2. 8.3.2.2 SNS Output
          1. 8.3.2.2.1 RSNS Value
            1. 8.3.2.2.1.1 High Accuracy Load Current Sense
            2. 8.3.2.2.1.2 SNS Output Filter
        3. 8.3.2.3 ST Pin
        4. 8.3.2.4 Fault Indication and SNS Mux
        5. 8.3.2.5 Resistor Sharing
        6. 8.3.2.6 High-Frequency, Low Duty-Cycle Current Sensing
      3. 8.3.3 Enable Watchdog
    4. 8.4 Device Functional Modes
      1. 8.4.1 Off
      2. 8.4.2 Standby
      3. 8.4.3 Diagnostic
      4. 8.4.4 Standby Delay
      5. 8.4.5 Active
      6. 8.4.6 Fault
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Ground Protection Network
      2. 9.1.2 Interface with Microcontroller
      3. 9.1.3 I/O Protection
      4. 9.1.4 Inverse Current
      5. 9.1.5 Loss of GND
      6. 9.1.6 Automotive Standards
        1. 9.1.6.1 ISO7637-2
        2. 9.1.6.2 AEC – Q100-012 Short Circuit Reliability
      7. 9.1.7 Thermal Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Thermal Considerations
        2. 9.2.2.2 Diagnostics
          1. 9.2.2.2.1 Selecting the RISNS Value
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

6.7 SNS Timing Characteristics

VBB = 8 to 18V, TJ = –40°C to 150°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SNS TIMING - CURRENT SENSE
tSNSION1 Settling time from rising edge of DIA_EN VEN = 5V, VDIA_EN = 0V to 5V
RSNS = 1kΩ, RL = 2.6Ω		 40 µs
tSNSION2 Settling time from rising edge of EN VEN = VDIA_EN = 0V to 5V
RSNS = 1kΩ, RL = 2.6Ω		 180 µs
tSNSION3 Settling time from rising edge of EN VEN = 0V to 5V, VDIA_EN = 5V
RSNS = 1kΩ, RL = 2.6Ω		 180 µs
tSNSIOFF1 Settling time from falling edge of DIA_EN VEN = 5V, VDIA_EN = 5V to 0V
RSNS = 1kΩ, RL = 2.6Ω		 20 µs
tSETTLEH Settling time from rising edge of load step VEN = 5V, VDIA_EN = 5V
RSNS = 1kΩ, IOUT = 1A to 5A		 20 µs
tSETTLEL Settling time from falling edge of load step VEN = 5V, VDIA_EN = 5V
RSNS = 1kΩ, IOUT = 5A to 1A		 20 µs
SNS TIMING - TEMPERATURE SENSE
tSNSTON1 Settling time from rising edge of DIA_EN VEN = 5V, VDIA_EN = 0V to 5V
RSNS = 1kΩ		 40 µs
tSNSTON2 Settling time from rising edge of DIA_EN VEN = 0V,VDIA_EN = 0V to 5V
RSNS = 1kΩ		 70 µs
tSNSTOFF Settling time from falling edge of DIA_EN VEN = X, VDIA_EN = 5V to 0V
RSNS = 1kΩ		 20 µs
SNS TIMING - VOLTAGE SENSE
tSNSVON1 Settling time from rising edge of DIA_EN VEN = 5V, VDIA_EN = 0V to 5V
RSNS = 1kΩ		 40 µs
tSNSVON2 Settling time from rising edge of DIA_EN VEN = 0V, VDIA_EN = 0V to 5V
RSNS = 1kΩ		 70 µs
tSNSVOFF Settling time from falling edge of DIA_EN VEN = X, VDIA_EN = 5V to 0V
RSNS = 1kΩ		 20 µs
SNS TIMING - MULTIPLEXER
tMUX Settling time from temperature sense to current sense VEN= X, VDIA_EN = 5V
VSEL1 = 5V to 0V, VSEL2 = 0V
RSNS = 1kΩ, RL = 2.6Ω		 60 µs
Settling time from temperature sense to voltage sense VEN = X, VDIA_EN = 5V
VSEL1 = 5V, VSEL2 = 0V to 5V
RSNS = 1kΩ		 60 µs
Settling time from voltage sense to temperature sense VEN = X, VDIA_EN = 5V
VSEL1 = 5V, VSEL2 = 5V to 0V
RSNS = 1kΩ		 60 µs
Settling time from voltage sense to current sense VEN = X, VDIA_EN = 5V
VSEL1 = VSEL2 = 5V to 0V,
RSNS = 1kΩ, RL = 2.6Ω		 60 µs
Settling time from current sense to temperature sense VEN = X, VDIA_EN = 5V
VSEL1 = 0V to 5V, VSEL2 = 0V
RSNS = 1kΩ, RL = 2.6Ω		 60 µs
Settling time from current sense to voltage sense VEN = X, VDIA_EN = 5V
VSEL1 = VSEL2 = 0V to 5V
RSNS = 1kΩ, RL = 2.6Ω		 60 µs
TPS1HA08-Q1 SNS Timing Characteristics Definitions
Rise and fall times of control signals are 100ns. Control signals include: EN, DIA_EN, SEL1, SEL2.
Set SEL1 and SEL2 to the appropriate values.
Use the temperature sense timing diagram to depict the voltage sense timings.
Figure 6-1 SNS Timing Characteristics Definitions
TPS1HA08-Q1 Switching Characteristics Definitions
Rise and fall time of VEN is 100ns.
Figure 6-2 Switching Characteristics Definitions