SLVSHS0A March   2025  – October 2025 TPS482H85-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics_24V
    8. 6.8 Switching Characteristics_48V
    9. 6.9 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Pin Current and Voltage Conventions
      2. 7.3.2 Accurate Current Sense
      3. 7.3.3 Adjustable Current Limit
      4. 7.3.4 Inductive-Load Switching-Off Clamp
      5. 7.3.5 Fault Detection and Reporting
        1. 7.3.5.1 Diagnostic Enable Function
        2. 7.3.5.2 Multiplexing of Current Sense
        3. 7.3.5.3 FLT Reporting
        4. 7.3.5.4 Fault Table
      6. 7.3.6 Full Diagnostics
        1. 7.3.6.1 Short-to-GND and Overload Detection
        2. 7.3.6.2 Open-Load Detection
          1. 7.3.6.2.1 Channel On
          2. 7.3.6.2.2 Channel Off
        3. 7.3.6.3 Short-to-Battery Detection
        4. 7.3.6.4 Reverse-Polarity and Battery Protection
        5. 7.3.6.5 Thermal Fault Detection
          1. 7.3.6.5.1 Thermal Protection Behavior
      7. 7.3.7 Full Protections
        1. 7.3.7.1 UVLO Protection
        2. 7.3.7.2 Loss of GND Protection
        3. 7.3.7.3 Loss of Power Supply Protection
        4. 7.3.7.4 Loss of VDD
        5. 7.3.7.5 Reverse Current Protection
        6. 7.3.7.6 Protection for MCU I/Os
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operational Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
        1. 8.4.2.1 Without a GND Network
        2. 8.4.2.2 With a GND Network
  10. 9 Device and Documentation Support
    1. 9.1 Third-Party Products Disclaimer
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.5 Electrical Characteristics

VBB = 8 V to 58 V, TJ = –40°C to 150°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT VOLTAGE AND CURRENT
VClamp VDS clamp voltage VBB = 8V, Ids = 1A TJ = –40°C to 150°C 55 67 V
VBB = 48V, Ids = 1A TJ = –40°C to 150°C 58 74 V
VUVLOR VBB undervoltage lockout rising (not indicated on FLT or SNS pin) Measured with respect to the GND pin of the device 6 6.2 6.5 V
VUVLOF VBB undervoltage lockout falling (not indicated on FLT or SNS pin) 5.2 5.6 5.9 V
ISLEEP_VDD Standby current from VDD supply VBB <= 54 V, VDD < 5.5V, VEN = VDIAG_EN = 0 V, VOUT = 0 V TJ = 85°C -0.2 0.1 µA
ISLEEP Standby current (total device leakage including both MOSFET channels) VBB ≤ 54V, VEN = VDIAG_EN = 0V, VOUT = 0V TJ = 25°C 2 µA
TJ = 85°C 4 µA
TJ = 125°C 10 µA
IOUT(standby) Output leakage current per channel VBB ≤ 54V, VEN = VDIAG_EN = 0V, VOUT = 0V TJ = 25°C 0.01 0.3 µA
TJ = 85°C 0.8 µA
TJ = 125°C 5 µA
IDIA Current consumption in diagnostic mode, channels OFF ISNS = 0 mA, VDD floating, VEN = 0V, VDIAG_EN = 5V, VOUT = 0V 1.2 1.5 mA
 ISNS = 0mA, VDD = 5V, VEN = 0V, VDIAG_EN = 5V, VOUT = 0V 0.5 0.8 mA
IQ_1CH,DIAG Quiescent current one channel enabled with external VDD ISNS = 0 mA, VOUT floating, VDD =5V, VEN1 = 5V, VDIAG_EN = 5V 1.4 1.6 mA
Quiescent current one channel enabled with internal VDD ISNS = 0mA, VOUT floating, VDD floating, VEN1 = 5V, VDIAG_EN = 5V 1.4 1.8 mA
IQ,DIAG Quiescent current both channels enabled, diagnostic enabled VEN = VDIAG_EN = 5V, IOUT = 0A, VDD = 5V 1 1.3 mA
VEN = VDIAG_EN = 5V, IOUT = 0A, VDD not connected 1.7 2 mA
IQ, VDD VDD Quiescent current when both channels enabled, diagnostic enabled VEN = VDIAG_EN = 5 V, IOUT = 0 A, VDD = 5V 0.6 0.8 mA
tSTBY Standby mode delay time VENx = VDIAG_EN = 0 V to standby 20 30 ms
RON CHARACTERISTICS
RON On-resistance per channel 8 V ≤ VBB ≤ 54 V,   IOUT= 1 A TJ = 25°C 85 95 mΩ
TJ = 150°C 165 mΩ
RON_par 2-channels Paralleled On-resistance 8 V ≤ VBB ≤ 54 V,   IOUT= 1 A TJ = 25°C 42 47 mΩ
TJ = 150°C 82 mΩ
RON Reverse Polarity On-resistance -28 V ≤ VBB ≤ -8 V,   IOUT= 1 A, EN2 = 0V TJ = 25°C 87 mΩ
TJ = 150°C 174 mΩ
ΔRON Delta On-resistance between channels 8 V ≤ VBB ≤ 28 V,   IOUT= 1 A TJ= -40°C to 150°C 5 %
ILNOM Continuous load current, per channel Two channels enabled, TA = 85°C, JEDEC 2s2p board with 4 thermal vias below VBB pad 2.2 A
One channel enabled, TA = 85°C, JEDEC 2s2p board with 4 thermal vias below VBB pad 3 A
VF Source-to-drain body diode voltage VEN = 0 V, IOUT = –1 A 0.3 0.7 1 V
CURRENT SENSE CHARACTERISTICS
KSNS Current sense ratio
IOUT / ISNS		 IOUT = 1A 2000
ISNS_SAT Saturated sense current (Current clamp setting) 4 4.5 mA
ISNSI   Current sense current VEN = VDIAG_EN = 5 V IOUT = 4 A 1.93 2.03 2.13 mA
IOUT = 2 A 0.96 1.01 1.07 mA
IOUT = 1 A 0.48 0.5 0.54 mA
IOUT = 500 mA 0.24 0.252 0.266 mA
IOUT = 200 mA 0.095 0.102 0.107 mA
IOUT = 100 mA 0.047 0.051 0.054 mA
IOUT = 50 mA 0.023 0.0255 0.027 mA
IOUT = 10 mA 0.0039 0.005 0.0061 mA
SNS CHARACTERISTICS
VSNSFH VSNS fault high-level VDIAG_EN = 5V  4.4 4.7 5.1 V
VDIAG_EN = 3.3 V, VDIAG_EN > VIH,DIAG_EN 3.0 3.3 3.5 V
ISNSFH ISNS fault high-level VDIAG_EN > VIH,DIAG_EN 4.2 5.2 mA
ISNSleak ISNS leakage with no load current VDIAG_EN = 5 V, IL = 0 mA TA = 25℃ 1 µA
TA = 125℃ 1.5 µA
VBB_ISNS VBB headroom needed for full current sense and fault functionality VDIAG_EN = 3.3 V 6 V
VDIAG_EN = 5 V 6.5 V
CURRENT LIMIT CHARACTERISTICS
RILIM,SHORT RLIM Short Circuit Detection Range 0.3 kΩ
RILIM,OPEN RLIM Open Detection Range 75 kΩ
ICLx CHx ICL Current limit regulation level Regulated current at short circuit RL < 200 mΩ when Enabled. TJ = –40°C to 150°C
 		 RILIM = Open 8.8 10 10.5 A
RILIM = Short 8 9 10 A
RILIM = 2.32 kΩ 7 8 9 A
RILIM = 6.04 kΩ 6 7 8 A
RILIM = 11.3 kΩ 4.9 6 7.1 A
RILIM = 18.2 kΩ 4.2 5 5.8 A
RILIM = 25.5 kΩ 3.3 4 4.8 A
RILIM = 34.8 kΩ 2.4 3 3.6 A
RILIM = 45.3 kΩ 1.6 2 2.4 A
RILIM = 57.6 kΩ 0.75 1 1.1 A
ICLx_LINPK CHx ICL current limit threshold before current limiting - overload condition.  Ratio to the regulated current limit level. dI/dt<0.01A/ms. TJ = –40°C to 150°C all RILIM 1.25 x ICL
IENPS Peak current enabling into permanent short. Ratio to the regulated current limit level. ZL = 100 mΩ + 5 μH. TJ = –40°C to 150°C IILIM < 3A 1.8 x ICL
IILIM >= 3A 1.6 x ICL
IOVCR
OVCR Peak current
threshold when short
is applied while switch
enabled

 ZL = 100 mΩ + 5 μH. TJ = –40°C to 150°C all RILIM 40 A
FAULT CHARACTERISTICS
VOL,off Open-load detection voltage (VDS voltage) VEN = 0 V, VDIAG_EN = 5 V, measure VDS voltage 2.1 2.4 2.7 V
VOL_HYS Open-load detection voltage (VDS voltage) comparator hysteresis VEN = 0 V, VDIAG_EN = 5 V 360 mV
RPU Open-load detection internal pull-up resistor per channel VEN = 0 V, VDIAG_EN = 5 V 180 270 360 kΩ
tOL_OFF Open-load indication-time from EN falling VEN = 5 V to 0 V, VDIAG_EN = 5 V, IOUT = 0 mA, VOUT = VBB - VOL 350 µs
tOL_OFF1 Open-load detection deglitch time VEN = 0 V, VDIAG_EN = 5 V, When VBB – VOUT < VOL, duration longer than tOL. Open load detected. 1.6 ms
tOL_OFF2 Open-load indication-time from DIAG_EN rising VEN = 0 V, VDIAG_EN = 0 V to 5 V, IOUT = 0 mA, VOUT = VBB - VOL 1.6 ms
TABS Thermal shutdown 153 169 185 °C
TREL Relative thermal shutdown 60 °C
THYS_ABS Thermal shutdown hysteresis 20 °C
tFLT Fault indication-time, Ver B VDIAG_EN = 5 V, Time between fault and FLT asserting 30 µs
tFLT_SNS Fault  indication-time through SNS pin VDIAG_EN = 5 V, Time between fault and ISNS settling at VSNSFH 70 µs
tRETRY Retry time  Time from fault shutdown until switch re-enable (thermal shutdown). 1 2 3 ms
EN PIN CHARACTERISTICS
VIL, ENx Input voltage low-level Relative to IC GND 0.8 V
VIH, ENx Input voltage high-level Relative to IC GND 1.5 V
VIHYS, ENx Input voltage hysteresis 150 280 400 mV
RENx Internal pulldown resistor VEN = 0.8 V 600 1000 1400 kΩ
IIL, ENx Input current low-level VEN = 0.8 V 4 µA
IIH, ENx Input current high-level VEN = 5 V 20 µA
DIAG_EN PIN CHARACTERISTICS
VIL, DIAG_EN Input voltage low-level 0.8 V
VIH, DIAG_EN Input voltage high-level 1.5 V
VIHYS, DIAG_EN Input voltage hysteresis 150 280 400 mV
RDIAG_EN Internal pulldown resistor VDIAG_EN = 0.8 V 600 1000 1400 kΩ
IIL_DIAG_EN Input current low-level VDIAG_EN = -1 V –10 0 µA
IIL, DIAG_EN Input current low-level VDIAG_EN = 0.8 V 4 µA
IIH, DIAG_EN Input current high-level VDIAG_EN = 5 V 20 µA
SEL PIN CHARACTERISTICS
VIL, SEL Input voltage low-level 0.8 V
VIH, SEL Input voltage high-level 1.5 V
VIHYS, SEL Input voltage hysteresis 150 280 400 mV
RSEL Internal pulldown resistor VSEL = 0.8 V VDIAG_EN = 0.8 V 600 1000 1400 kΩ
IIL, SEL Input current low-level VSEL = 0.8 V VDIAG_EN = 0.8 V 1.1 µA
IIH, SEL Input current high-level VSEL = 5V VDIAG_EN = 5 V 7 µA
LATCH PIN CHARACTERISTICS
VIH, LATCH Input voltage high-level 1.5 V
VIL, LATCH Input voltage low-level 0.8 V
IIL,LATCH Input current low-level VLATCH = 0.8 V VDIAG_EN = 0.8 V 2 µA
IIH,LATCH Input current high-level VLATCH = 5V VDIAG_EN = 5 V 12 µA
VIHYS,LATCH Input voltage hysteresis 150 280 400 mV
RLATCH Internal pulldown resistor VLATCH = 0.8 V VDIAG_EN = 0.8 V 400 500 600 kΩ