SLVSHS0A March   2025  – October 2025 TPS482H85-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics_24V
    8. 6.8 Switching Characteristics_48V
    9. 6.9 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Pin Current and Voltage Conventions
      2. 7.3.2 Accurate Current Sense
      3. 7.3.3 Adjustable Current Limit
      4. 7.3.4 Inductive-Load Switching-Off Clamp
      5. 7.3.5 Fault Detection and Reporting
        1. 7.3.5.1 Diagnostic Enable Function
        2. 7.3.5.2 Multiplexing of Current Sense
        3. 7.3.5.3 FLT Reporting
        4. 7.3.5.4 Fault Table
      6. 7.3.6 Full Diagnostics
        1. 7.3.6.1 Short-to-GND and Overload Detection
        2. 7.3.6.2 Open-Load Detection
          1. 7.3.6.2.1 Channel On
          2. 7.3.6.2.2 Channel Off
        3. 7.3.6.3 Short-to-Battery Detection
        4. 7.3.6.4 Reverse-Polarity and Battery Protection
        5. 7.3.6.5 Thermal Fault Detection
          1. 7.3.6.5.1 Thermal Protection Behavior
      7. 7.3.7 Full Protections
        1. 7.3.7.1 UVLO Protection
        2. 7.3.7.2 Loss of GND Protection
        3. 7.3.7.3 Loss of Power Supply Protection
        4. 7.3.7.4 Loss of VDD
        5. 7.3.7.5 Reverse Current Protection
        6. 7.3.7.6 Protection for MCU I/Os
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operational Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
        1. 8.4.2.1 Without a GND Network
        2. 8.4.2.2 With a GND Network
  10. 9 Device and Documentation Support
    1. 9.1 Third-Party Products Disclaimer
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.7 Switching Characteristics_24V

VBB = 24V, TJ = –40°C to +150°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tDR Channel Turn-on delay time (from Standby) RL = 20 Ω (50% of EN to 20% of VOUT) 100 µs
tDR Channel Turn-on delay time (from Active) RL = 20 Ω (50% of EN to 20% of VOUT) 50 µs
tDF Channel Turn-off delay time RL = 20 Ω (50% of EN to 80% of VOUT) 50 µs
SRR VOUT rising slew rate 20% to 80% of VOUT, RL = 20 Ω 0.2 0.7 V/µs
SRF VOUT falling slew rate 80% to 20% of VOUT, RL = 20 Ω 0.25 0.7 V/µs
fPWM PWM frequency 1 kHz
tON Channel Turn-on time RL = 20 Ω (50% of EN to 80% of VOUT) 140 µs
tOFF Channel Turn-off time RL = 20 Ω (50% of EN to 20% of VOUT) 86 µs
tON – tOFF  Turn-on and off matching 1-ms enable pulse in Active state, RL = 20 Ω, DIAG_EN high –15 20 µs
200-µs enable pulse in Active state, RL = 20 Ω, DIAG_EN high –30 30 µs
EON Switching energy losses during turn-on RL = 50 Ω  0.15 mJ
EOFF Switching energy losses during turn-off RL = 50 Ω  0.15 mJ