SLVSHS0A March   2025  – October 2025 TPS482H85-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics_24V
    8. 6.8 Switching Characteristics_48V
    9. 6.9 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Pin Current and Voltage Conventions
      2. 7.3.2 Accurate Current Sense
      3. 7.3.3 Adjustable Current Limit
      4. 7.3.4 Inductive-Load Switching-Off Clamp
      5. 7.3.5 Fault Detection and Reporting
        1. 7.3.5.1 Diagnostic Enable Function
        2. 7.3.5.2 Multiplexing of Current Sense
        3. 7.3.5.3 FLT Reporting
        4. 7.3.5.4 Fault Table
      6. 7.3.6 Full Diagnostics
        1. 7.3.6.1 Short-to-GND and Overload Detection
        2. 7.3.6.2 Open-Load Detection
          1. 7.3.6.2.1 Channel On
          2. 7.3.6.2.2 Channel Off
        3. 7.3.6.3 Short-to-Battery Detection
        4. 7.3.6.4 Reverse-Polarity and Battery Protection
        5. 7.3.6.5 Thermal Fault Detection
          1. 7.3.6.5.1 Thermal Protection Behavior
      7. 7.3.7 Full Protections
        1. 7.3.7.1 UVLO Protection
        2. 7.3.7.2 Loss of GND Protection
        3. 7.3.7.3 Loss of Power Supply Protection
        4. 7.3.7.4 Loss of VDD
        5. 7.3.7.5 Reverse Current Protection
        6. 7.3.7.6 Protection for MCU I/Os
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operational Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
        1. 8.4.2.1 Without a GND Network
        2. 8.4.2.2 With a GND Network
  10. Device and Documentation Support
    1. 9.1 Third-Party Products Disclaimer
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

SNS Timing Characteristics

VBB = 6 V to 18 V, TJ = –40°C to +150°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SNS TIMING - CURRENT SENSE
tSNSION1 Settling time from rising edge of DIAG_EN (50% of VDIAG_EN to 90% of settled ISNS) VENx= 5 V, VDIAG_EN = 0 V to 5 V, RSNS = 1 kΩ, IL = 0.32A 20 µs
VEN = 5 V, VDIAG_EN = 0 V to 5 V, RSNS = 1 kΩ, IL = 16mA 6 µs
tSNSION2 Settling time from rising edge of EN and DIAG_EN (50% of VDIAG_EN  VEN to 90% of settled ISNS) VEN = VDIAG_EN = 0 V to 5 V, VBB = 48 V, RSNS = 1 kΩ, IL = 0.32A 160 µs
tSNSION3 Settling time from rising edge of EN with DIAG_EN HI (50% of VDIAG_EN  VEN to 90% of settled ISNS) VEN = 0 V to 5 V, VDIAG_EN = 5 V, VBB = 48 V, RSNS = 1 kΩ, IL = 0.32A 160 µs
tSNSIOFF Settling time from falling edge of DIAG_EN (50% of VDIAG_EN to 5% of settled ISNS) VEN = 5 V, VDIAG_EN = 5 V to 0 V, VBB = 48 V, RSNS = 1 kΩ, IL = 0.32A 17 µs
tSETTLEH Settling time from rising edge of load step VEN = 5 V, VDIAG_EN = 5 V, RSNS = 1 kΩ, IL = 16mA to 0.32A 3 µs
tSETTLEL Settling time from falling edge of load step VEN = 5 V, VDIAG_EN = 5 V, RSNS = 1 kΩ, IL = 0.32A to 16mA 4 µs
tMUX Settling time from switching from CHx to CHy VEN = 5 V, VDIAG_EN = 5 V, RSNS = 1 kΩ, SEL = 0 V to 5 V, CH1 = 0.48A, CH2 = 3.2A 20 µs
tMUX Settling time from switching from CH2 to CH1 VEN1 = 5 V, VEN2 = 0 V, VDIAG_EN = 5 V, RSNS = 1 kΩ, SEL = 5 V to 0 V, CH1 = 0.48A, CH2 = Open 38 µs
tMUX Settling time from switching from CH1 to CH2 VEN1 = 5 V, VEN2 = 0 V, VDIAG_EN = 5 V, RSNS = 1 kΩ, SEL = 0 V to 5 V, CH1 = 0.48A, CH2 = Open 825 µs