SLYY203B September   2021  – April 2023 BQ25125 , LM5123-Q1 , LMR43610 , LMR43610-Q1 , LMR43620 , LMR43620-Q1 , TPS22916 , TPS3840 , TPS62840 , TPS63900 , TPS7A02

 

  1.   1
  2.   Overview
  3.   At a glance
  4.   Contributors to IQ
  5.   Why low IQ creates new challenges
    1.     Transient response
    2.     Ripple
    3.     Noise
    4.     Die size and solution area
    5.     Leakage and subthreshold operation
  6.   How to break low IQ barriers
    1.     Addressing transient response issues
    2.     Addressing switching-noise issues
    3.     Addressing other noise issues
    4.     Addressing die size and solution area issues
    5.     Addressing leakage and subthreshold operation issues
  7.   Electrical Characteristics
    1.     18
    2.     Avoiding potential system pitfalls in a low-IQ designs
    3.     Achieving low IQ, but not losing flexibility
    4.     Reducing external component count to lower IQ in automotive applications automotive applications
    5.     Smart on or enable features supporting low-IQ at the Smart on or enable features supporting low-IQ at the system level
  8.   Conclusion
  9.   Key product categories for low IQ

Variations in IQ-GND, ISHDN and VOUT accuracy are all good indicators of the manufacturability of a process technology’s components. Table 1, from the TPS7A02 Nanopower IQ, 25-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response Data Sheet, lists that IGND at no load varies 25 nA to 60 nA over a -40°C to 85°C temperature range. This variation across temperature is representative of current mirror mismatch and IBIAS generation control. The ISHDN, which varies from 3 nA to 10 nA at room temperature, is a good indicator of power FET and digital logic leakage control. VOUT accuracy is <1.5% over temperature, which is a good indicator of subthreshold mismatch control.