SLYY203B September 2021 – April 2023 BQ25125 , LM5123-Q1 , LMR43610 , LMR43610-Q1 , LMR43620 , LMR43620-Q1 , TPS22916 , TPS3840 , TPS62840 , TPS63900 , TPS7A02
Variations in IQ-GND, ISHDN and VOUT accuracy are all good indicators of the manufacturability of a process technology’s components. Table 1, from the TPS7A02 Nanopower IQ, 25-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response Data Sheet, lists that IGND at no load varies 25 nA to 60 nA over a -40°C to 85°C temperature range. This variation across temperature is representative of current mirror mismatch and IBIAS generation control. The ISHDN, which varies from 3 nA to 10 nA at room temperature, is a good indicator of power FET and digital logic leakage control. VOUT accuracy is <1.5% over temperature, which is a good indicator of subthreshold mismatch control.