SPRAD61A March   2023  – November 2023 AM2732 , AM2732 , AM2732-Q1 , AM2732-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
    1. 1.1 Acronyms
  5. 2 Power
    1. 2.1 Discrete DC-DC Power Solution
    2. 2.2 Integrated PMIC Power Solution
    3. 2.3 Power Decoupling and Filtering
    4. 2.4 Power Consumption
  6. 3 Clocking
    1. 3.1 Crystal and Oscillator Input Options
    2. 3.2 Output Clock Generation
    3. 3.3 Crystal Selection and Shunt Capacitance
    4. 3.4 Crystal Placement and Routing
  7. 4 Resets
  8. 5 Bootstrapping
    1. 5.1 SOP Signal Implementation
    2. 5.2 QSPI Memory Controller Implementation
    3. 5.3 ROM QSPI Boot Requirements
  9. 6 JTAG Emulators and Trace
  10. 7 Multiplexed Peripherals
  11. 8 Digital Peripherals
    1. 8.1 General Digital Peripheral Routing Guidelines
  12. 9 Layer Stackup
    1. 9.1 TMDS273GPEVM Layer Stackup
      1. 9.1.1 TMDS273GPEVM Key Stackup Features
    2. 9.2 Four Layer ZCE Example Layer Stackup
      1. 9.2.1 ZCE Four Layer Example Key Stackup Features
    3. 9.3 Four Layer NZN Example Layer Stackup
      1. 9.3.1 NZN Four Layer Example Key Stackup Features
  13. 10Vias
  14. 11BGA Power Fan-Out and Decoupling Placement
    1. 11.1 Ground Return
      1. 11.1.1 Ground Return - TMDS273GPEVM
      2. 11.1.2 Ground Return - ZCE Four Layer Example
      3. 11.1.3 Ground Return - NZN Four Layer Example
    2. 11.2 1.2 V Core Digital Power
      1. 11.2.1 1.2 V Core Digital Power Key Layout Considerations
        1. 11.2.1.1 1.2V Core Layout - TMDS273GPEVM
        2. 11.2.1.2 1.2V Core Layout - ZCE Four Layer Example
        3. 11.2.1.3 1.2V Core Layout - NZN Four Layer Example
    3. 11.3 3.3 V Digital and Analog Power
      1. 11.3.1 3.3 V Digital and Analog Power Key Layout Considerations
        1. 11.3.1.1 3.3V Digital and Analog Layout - TMDS273GPEVM
        2. 11.3.1.2 3.3V Digital and Analog Layout - ZCE Four Layer Example
        3. 11.3.1.3 3.3V Digital and Analog Layout - NZN Four Layer Example
    4. 11.4 1.8 V Digital and Analog Power
      1. 11.4.1 1.8 V Digital and Analog Power Key Layout Considerations
        1. 11.4.1.1 1.8V Digital and Analog Layout - TMDS273GPEVM
        2. 11.4.1.2 1.8V Digital and Analog Layout - ZCE Four Layer Example
        3. 11.4.1.3 1.8V Digital and Analog Layout - NZN Four Layer Example
  15. 12References
  16. 13Revision History

9.1.1 TMDS273GPEVM Key Stackup Features

  • Standard 62 mil total thickness
  • 4 optionally controlled impedance routing layers on L1, L3, L8 and L10.
  • All signal and power layers have adjacent ground reference for controlled impedance planning and EMI performance
  • Minimal dielectric thickness between L5 power and L4 GND return layers as well as L6 power and L7 GND return layers for best plane capacitance performance, aiding power integrity and EMI.
  • Example fan-out with all through-hole via layer transitions – no micro-via or via-in-pad necessary.
Table 9-1 TMDS273GPEVM Layer Utilization
Layer Number Comment
Copper 1 (Top) Top layer mounting and signal routing
Copper 2 Ground return plane
Copper 3 Embedded Microstrip/Stripline signal routing and power routing
Copper 4 Ground return plane
Copper 5 Power routing
Copper 6 Power routing
Copper 7 Ground return plane
Copper 8 Embedded Microstrip/Stripline signal routing and power routing
Copper 9 Ground return plane
Copper 10 (Bottom) Bottom layer mounting and signal routing